X-On Electronics has gained recognition as a prominent supplier of GD10MPS12H Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. GD10MPS12H Schottky Diodes & Rectifiers are a product manufactured by GeneSiC Semiconductor. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

GD10MPS12H GeneSiC Semiconductor

GD10MPS12H electronic component of GeneSiC Semiconductor
GD10MPS12H GeneSiC Semiconductor
GD10MPS12H Schottky Diodes & Rectifiers
GD10MPS12H  Semiconductors

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See Product Specifications
Part No. GD10MPS12H
Manufacturer: GeneSiC Semiconductor
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers 1200V 10A TO-247-2 SiC Schottky MPS
Datasheet: GD10MPS12H Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 5.225 ea
Line Total: USD 5.22 
Availability - 1403
Ship by Wed. 11 Jun to Fri. 13 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1403
Ship by Wed. 11 Jun to Fri. 13 Jun
MOQ : 1
Multiples : 1
1 : USD 5.225
10 : USD 4.147
30 : USD 4.004
120 : USD 3.784
270 : USD 3.608
510 : USD 3.531
1020 : USD 3.531
2520 : USD 3.443
5010 : USD 3.322

   
Manufacturer
Product Category
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Maximum Operating Temperature
Series
Packaging
Hts Code
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the GD10MPS12H from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the GD10MPS12H and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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GD10MPS12H TM 1200V 10A SiC Schoktt y MPS Diode Silicon Carbide Schoktt y Diode V = 1200 V RRM IF (T = 156C) = 10 A C Q = 32 nC C Features Package Gen4 Thin Chip Technology for Low V F Case Superior Figure of Merit Q *V C F 100% Avalanche (UIL) Tested Enhanced Surge Current Withstand Capability RoHS Temperature Independent Fast Switching Low Thermal Resistance Positi ve Temperature Coe c ient of V F High dV/dt Ruggedness TO-247-2 REACH K A Advantages Applicaoti ns Improved System E c iency Power Factor Correc tion (PFC) High System Reliability Solar Inverters Optimal Price Performance Ba ttery Chargers Reduced Cooling Requirements High Frequency Converters Increased System Power Density Switched Mode Power Supply (SMPS) Zero Reverse Recovery Current AC/DC Power Supplies Easy to Parallel without Thermal Runaway An ti-Parallel / Free-Wheeling Diode Enables Extremely Fast Switching LED and HID Ligh ting Absolute Maximum Rangti s (At T = 25C Unless Otherwise Stated) C Parameter Symbol Conditions Values Unit Note Repetitive Peak Reverse Voltage V 1200 V RRM TC = 100C, D = 1 23 Continuous Forward Current IF TC = 135C, D = 1 16 A Fig. 4 T = 156C, D = 1 10 C T = 25C, t = 10 ms 80 Non-Repetitive Peak Forward Surge Current, Half Sine C P IF,SM A Wave T = 150C, t = 10 ms 64 C P TC = 25C, tP = 10 ms 48 Repetitive Peak Forward Surge Current, Half Sine Wave I A F,RM TC = 150C, tP = 10 ms 33 Non-Repetitive Peak Forward Surge Current I T = 25C, t = 10 s 400 A F,MAX C P 2 2 2 i t Value i dt T = 25C, t = 10 ms 32 A s C P Non-Repetitive Avalanche Energy EAS L = 1.8 mH, IAS = 10 A 91 mJ Diode Ruggedness dV/dt V = 0 ~ 960 V 200 V/ns R Power Dissipation P T = 25C 149 W Fig. 3 TOT C Operating and Storage Temperature Tj , Tstg -55 to 175 C Rev 21/Jul Latest Version at: www.genesicsemi.com/sic-schottky-mps/GD10MPS12H/GD10MPS12H.pdf Page 1 of 7GD10MPS12H TM 1200V 10A SiC Schoktt y MPS Diode Electrical Characteriscti s Values Parameter Symbol Conditions Unit Note Min. Typ. Max. I = 10 A, T = 25C 1.5 1.8 F j Diode Forward Voltage V V Fig. 1 F I = 10 A, T = 175C 1.9 F j V = 1200 V, T = 25C 1 10 R j Reverse Current I A Fig. 2 R V = 1200 V, T = 175C 7 R j VR = 400 V 22 Total Capacitive Charge Q nC Fig. 7 C VR = 800 V 32 IF IF,MAX dI /dt = 200 A/s F V = 400 V R Switching Time tS < 10 ns V = 800 V R VR = 1 V, f = 1MHz 367 Total Capacitance C pF Fig. 6 VR = 800 V, f = 1MHz 21 Thermal/Package Characteriscti s Values Parameter Symbol Conditions Unit Note Min. Typ. Max. Thermal Resistance, Junction - Case RthJC 1.0 C/W Fig. 9 Weight W 6.0 g T Mounting Torque T Screws to Heatsink 1.1 Nm M Rev 21/Jul Latest Version at: www.genesicsemi.com/sic-schottky-mps/GD10MPS12H/GD10MPS12H.pdf Page 2 of 7

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
GENESIC SEMICONDUCTOR INC.
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