GD25MPS17H TM 1700V 25A SiC Schoktt y MPS Diode Silicon Carbide Schoktt y Diode V = 1700 V RRM IF (T = 156C) = 25 A C Q = 206 nC C Features Package Gen4 Thin Chip Technology for Low V F Case Enhanced Surge and Avalanche Robustness Superior Figure of Merit Q /I C F Low Thermal Resistance RoHS Low Reverse Leakage Current Temperature Independent Fast Switching Positi ve Temperature Coe c ient of V F Low V for High Temperature Operation F TO-247-2 REACH K A Advantages Applicaoti ns Improved System E c iency EV Fast Chargers High System Reliability Solar Inverters Op timal Price Performance Wind Energy Converters Reduced Cooling Requirements Train Auxiliary Power Supplies Increased System Power Density High Frequency Rec ti ers Zero Reverse Recovery Current Switched Mode Power Supplies Easy to Parallel without Thermal Runaway Motor Drives Improved System E c iency Pulsed Power Absolute Maximum Rangti s (At T = 25C Unless Otherwise Stated) C Parameter Symbol Conditions Values Unit Note Repetitive Peak Reverse Voltage V 1700 V RRM TC = 100C, D = 1 56 Continuous Forward Current IF TC = 135C, D = 1 39 A Fig. 4 T = 156C, D = 1 25 C T = 25C, t = 10 ms 250 Non-Repetitive Peak Forward Surge Current, Half Sine C P IF,SM A Wave T = 150C, t = 10 ms 200 C P TC = 25C, tP = 10 ms 150 Repetitive Peak Forward Surge Current, Half Sine Wave I A F,RM TC = 150C, tP = 10 ms 105 Non-Repetitive Peak Forward Surge Current I T = 25C, t = 10 s 1250 A F,MAX C P 2 2 2 i t Value i dt T = 25C, t = 10 ms 312 A s C P Non-Repetitive Avalanche Energy EAS L = 1.6 mH, IAS = 25 A 500 mJ Diode Ruggedness dV/dt V = 0 ~ 1360 V 200 V/ns R Power Dissipation P T = 25C 425 W Fig. 3 TOT C Operating and Storage Temperature Tj , Tstg -55 to 175 C Rev 21/Jun Latest Version at: www.genesicsemi.com/sic-schottky-mps/GD25MPS17H/GD25MPS17H.pdf Page 1 of 7GD25MPS17H TM 1700V 25A SiC Schoktt y MPS Diode Electrical Characteriscti s Values Parameter Symbol Conditions Unit Note Min. Typ. Max. I = 25 A, T = 25C 1.5 1.8 F j Diode Forward Voltage V V Fig. 1 F I = 25 A, T = 175C 2.1 F j V = 1700 V, T = 25C 1 20 R j Reverse Current I A Fig. 2 R V = 1700 V, T = 175C 16 R j VR = 600 V 141 Total Capacitive Charge Q nC Fig. 7 C VR = 1200 V 206 IF IF,MAX dI /dt = 200 A/s F V = 600 V R Switching Time tS < 10 ns V = 1200 V R VR = 1 V, f = 1MHz 1803 Total Capacitance C pF Fig. 6 VR = 1200 V, f = 1MHz 99 Thermal/Package Characteriscti s Values Parameter Symbol Conditions Unit Note Min. Typ. Max. Thermal Resistance, Junction - Case RthJC 0.35 C/W Fig. 9 Weight W 6.0 g T Mounting Torque T Screws to Heatsink 1.1 Nm M Rev 21/Jun Latest Version at: www.genesicsemi.com/sic-schottky-mps/GD25MPS17H/GD25MPS17H.pdf Page 2 of 7