GD2X100MPS12N TM 1200V 200A SiC Schoktt y MPS Diode Silicon Carbide Schoktt y Diode V = 1200 V RRM IF (T = 114C) = 200 A * C Q = 644 nC * C Features Package Gen4 Thin Chip Technology for Low V F A A Superior Figure of Merit Q /I C F 100% Avalanche Tested Enhanced Surge Current Robustness RoHS Temperature Independent Fast Switching Low Thermal Resistance Positi ve Temperature Coe c ient of V F High dV/dt Ruggedness SOT-227 REACH K K Advantages Applicaoti ns Improved System E c iency EV Fast Chargers High System Reliability Solar Inverters Optimal Price Performance Train Auxiliary Power Supplies Reduced Cooling Requirements High frequency Converters Increased System Power Density Motor Drives Zero Reverse Recovery Current Induc tion Heating and Welding Easy to Parallel without Thermal Runaway Uninterrup tible Power Supply (UPS) Enables Extremely Fast Switching Pulsed Power Absolute Maximum Rangti s (At T = 25C Unless Otherwise Stated) C Parameter Symbol Conditions Values Unit Note Repetitive Peak Reverse Voltage (Per Leg) V 1200 V RRM TC = 75C, D = 1 136 / 272 Continuous Forward Current (Per Leg / Per Device) IF TC = 100C, D = 1 114 / 228 A Fig. 4 T = 114C, D = 1 100 / 200 C T = 25C, t = 10 ms 1000 Non-Repetitive Peak Forward Surge Current, Half Sine C P IF,SM A Wave (Per Leg) T = 150C, t = 10 ms 800 C P Repetitive Peak Forward Surge Current, Half Sine Wave TC = 25C, tP = 10 ms 600 I A F,RM (Per Leg) TC = 150C, tP = 10 ms 420 Non-Repetitive Peak Forward Surge Current (Per Leg) I T = 25C, t = 10 s 5000 A F,MAX C P 2 2 2 i t Value (Per Leg) i dt T = 25C, t = 10 ms 5000 A s C P Non-Repetitive Avalanche Energy (Per Leg) EAS L = 0.2 mH, IAS = 100 A 901 mJ Diode Ruggedness (Per Leg) dV/dt V = 0 ~ 960 V 200 V/ns R Power Dissipation (Per Leg / Per Device) P T = 25C 470 / 940 W Fig. 3 TOT C Operating and Storage Temperature Tj , Tstg -55 to 175 C * Per Device Rev 21/Mar Latest Version at: www.genesicsemi.com/sic-schottky-mps/GD2X100MPS12N/GD2X100MPS12N.pdf Page 1 of 7GD2X100MPS12N TM 1200V 200A SiC Schoktt y MPS Diode Electrical Characteriscti s (Per Leg) Values Parameter Symbol Conditions Unit Note Min. Typ. Max. I = 100 A, T = 25C 1.5 1.8 F j Diode Forward Voltage V V Fig. 1 F I = 100 A, T = 175C 1.9 F j V = 1200 V, T = 25C 5 25 R j Reverse Current I A Fig. 2 R V = 1200 V, T = 175C 65 R j VR = 400 V 222 Total Capacitive Charge Q nC Fig. 7 C VR = 800 V 322 IF IF,MAX dI /dt = 200 A/s F V = 400 V R Switching Time tS < 10 ns V = 800 V R VR = 1 V, f = 1MHz 3670 Total Capacitance C pF Fig. 6 VR = 800 V, f = 1MHz 215 Thermal/Package Characteriscti s Values Parameter Symbol Conditions Unit Note Min. Typ. Max. Thermal Resistance, Junction - Case R 0.32 C/W Fig. 9 thJC (Per Leg) Weight WT 28.0 g Mounting Torque T Screws to Heatsink 1.5 Nm M Terminal Connection Torque T M4 Screws 1.3 Nm C t = 1s (50/60 Hz) 3000 Isolation Voltage(RMS) V V ISO t = 60s (50/60 Hz) 2500 d Terminal to Terminal 10.5 Ctt Creepage Distance on Surface mm d Terminal to Backside 8.5 Ctb d Terminal to Terminal 3.2 Stt Striking Distance Through Air mm d Terminal to Backside 6.8 Stb Rev 21/Mar Latest Version at: www.genesicsemi.com/sic-schottky-mps/GD2X100MPS12N/GD2X100MPS12N.pdf Page 2 of 7