KBPC3508T GeneSiC Semiconductor

KBPC3506T/W thru KBPC3510T/W V = 600 V - 1000 V RRM Single Phase Silicon I = 35 A O Bridge Rectifier Features High efficiency Silicon junction Metal case Types from 600 V to 1000 V V KBPC-T/W Package RRM Not ESD Sensitive Mechanical Data Case: Mounted in the bridge encapsulation Mounting: Hole for 10 screw Polarity: Marked on case Maximum ratings at Tc = 25 C, unless otherwise specified (KBPCXXXXT uses KBPC-T package while KBPCXXXXW uses KBPC-W package) Parameter Symbol Conditions KBPC3506T/W KBPC3508T/W KBPC3510T/W Unit Repetitive peak reverse voltage V 600 800 1000 V RRM V RMS reverse voltage 420 560 700 V RMS V 1000 DC blocking voltage 600 800 V DC T -55 to 150 Operating temperature -55 to 150 -55 to 150 C j Storage temperature T -55 to 150 -55 to 150 -55 to 150 C stg Electrical characteristics at Tc = 25 C, unless otherwise specified Single phase, half sine wave, 60 Hz, resistive or inductive load For capacitive load derate current by 20% Conditions KBPC3510T/W Parameter Symbol KBPC3506T/W KBPC3508T/W Unit Maximum average forward rectified T = 55 C I 35 35 35 A c O current Peak forward surge current I 8.3 ms half sine-wave 400 400 400 A FSM Maximum instantaneous forward V I = 17.5 A 1.1 1.1 1.1 V F F voltage per leg T = 25 C 5 Maximum DC reverse current at 5 5 c I A R rated DC blocking voltage per leg T = 100 C 500 500 500 c 1 C 300 300 300 pF j Typical junction capacitance Thermal characteristics 2 Typical thermal resistance R 1.4 1.4 1.4 C/W JC 1 - Measured ay 1 MHz and applied reverse voltage of 4.0 V D.C. 2 - Device mounted on 300 mm x 300 mm x 1.6 mm Cu plate heatsink 1 Oct. 2018 KBPC3506T/W thru KBPC3510T/W 2 Oct. 2018