MBR20020CT GeneSiC Semiconductor

MBR20020CT thru MBR20040CTR V = 20 V - 40 V RRM Silicon Power I = 200 A F(AV) Schottky Diode Features High Surge Capability Twin Tower Package Types from 20 to 40 V V RRM Not ESD Sensitive Maximum ratings, at T = 25 C, unless otherwise specified devices have leads reversed) j Conditions MBR20035CT(R) MBR20040CT(R) Parameter Symbol MBR20020CT(R) MBR20030CT(R) Unit Repetitive peak reverse V 20 30 35 40 V RRM voltage V 25 28 RMS reverse voltage 14 21 V RMS DC blocking voltage V 20 30 35 40 V DC Operating temperature T -55 to 150 -55 to 150 -55 to 150 -55 to 150 C j T -55 to 150 -55 to 150 Storage temperature -55 to 150 -55 to 150 C stg Electrical characteristics, at Tj = 25 C, unless otherwise specified Conditions MBR20035CT(R) MBR20040CT(R) Parameter Symbol MBR20020CT(R) MBR20030CT(R) Unit Average forward current T = 125 C I 200 200 C 200 200 A F(AV) (per pkg) Peak forward surge I t = 8.3 ms, half sine 1500 1500 1500 1500 A FSM p current (per leg) Maximum forward V I = 100 A, T = 25 C 0.70 0.70 V 0.70 0.70 F FM j voltage (per leg) T = 25 C 1 1 1 1 j Reverse current at rated DC blocking voltage I T = 100 C 10 10 10 10 mA R j (per leg) T = 150 C 30 30 30 30 j Thermal characteristics Thermal resistance, R 0.45 0.45 0.45 0.45 C/W thJC junction-case, per leg 1 Oct. 2018 MBR20020CT thru MBR20040CTR 2 Oct. 2018