X-On Electronics has gained recognition as a prominent supplier of MBR2X030A100 discrete semiconductor modules across the USA, India, Europe, Australia, and various other global locations. MBR2X030A100 discrete semiconductor modules are a product manufactured by GeneSiC Semiconductor. We provide cost-effective solutions for discrete semiconductor modules, ensuring timely deliveries around the world.

MBR2X030A100

MBR2X030A100 electronic component of GeneSiC Semiconductor
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See Product Specifications
Part No.MBR2X030A100
Manufacturer: GeneSiC Semiconductor
Category:Discrete Semiconductor Modules
Description: Discrete Semiconductor Modules 100V 60A Fwd Schottky
Datasheet: MBR2X030A100 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 57.759 ea
Line Total: USD 57.76

Availability - 17
Ships to you between
Thu. 06 Jun to Mon. 10 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
10 - WHS 1


Ships to you between Thu. 06 Jun to Mon. 10 Jun

MOQ : 1
Multiples : 1
1 : USD 51.0945
10 : USD 45.172
25 : USD 43.24
52 : USD 43.0445
104 : USD 43.033

     
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We proudly offer the MBR2X030A100 Discrete Semiconductor Modules at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the MBR2X030A100 Discrete Semiconductor Modules.

MBR2X030A100 V = 100 V RRM Schottky Rectifier I = 60 A Module Type 60 A F(AV) Features High Surge Capability Type 100 V V RRM Isolation Type Package SOT-227 Package Electrically Isolated Base Plate Not ESD Sensitive Maximum ratings Conditions Parameter Symbol Value Unit Maximum recurrent peak reverse voltage V 100 V RRM V Maximum DC blocking voltage 100 V DC Maximum RMS Voltage V 70 V RMS Operating temperature T -40 to 150 C j T Storage temperature -40 to 150 C stg Electrical characteristics at 25 C, unless otherwise specified Parameter Symbol Conditions Value Unit I T = 110 C Average forward current (per pkg) C 60 A F(AV) Peak forward surge current (per leg) I 8.3 ms, half sine 500 A FSM I = 30 A, T = 25 C Maximum instantaneous forward voltage* 0.84 V FM j V F (per leg) I = 30 A, T = 125 C 0.75 V FM j 1 mA T = 25 C j Maximum instantaneous reverse current at I T = 100 C R 10 mA j rated DC blocking voltage (per leg) T = 150 C 30 mA j V A.C. 1 minute Isolation voltage 2500 V iSO Thermal characteristics Maximum thermal resistance junction to case R 1.20 C/W jc (per leg) * Pulse Test: Pulse width 300 s, Duty < 2 % 1 Oct. 2018 MBR2X030A100 2 Oct. 2018

Tariff Desc

8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free
GENESIC SEMI
GENESIC SEMICONDUCTOR INC.

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