MBR8045 thru MBR80100R
V = 45 V - 100 V
RRM
Silicon Power
I = 80 A
F(AV)
Schottky Diode
Features
High Surge Capability DO-5 Package
Types from 45 V to 100 V V
RRM
Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
2. Reverse polarity (R): Stud is anode.
3. Stud is base.
Maximum ratings, at T = 25 C, unless otherwise specified devices have leads reversed)
j
Parameter Symbol Conditions MBR8045(R) MBR8060(R) MBR8080(R) MBR80100(R) Unit
Repetitive peak reverse voltag V 45 60 80 100 V
RRM
V 50 70
RMS reverse voltage 32 42 V
RMS
DCDC blockingblocking vvoltageoltage VV 4545 6060 8080 100100 VV
DCDC
T -55 to 150 -55 to 150
Operating temperature -55 to 150 -55 to 150 C
j
Storage temperature T -55 to 150 -55 to 150 -55 to 150 -55 to 150 C
stg
Electrical characteristics, at Tj = 25 C, unless otherwise specified
Parameter Symbol Conditions MBR8045(R) MBR8060(R) MBR8080(R) MBR80100(R) Unit
Average forward current (per
I T = 125 C
80 80 80 80 A
F(AV) C
pkg)
Peak forward surge current
I t = 8.3 ms, half sine
1000 1000 1000 1000 A
FSM p
(per leg)
Maximum forward voltage
V I = 80 A, T = 25 C 0.84 0.84 V
F FM j 0.75 0.78
(per leg)
T = 25 C 11
11
j
Maximum instantaneous
I T = 100 C 10 10
reverse current at rated DC 10 10 mA
R j
blocking voltage (per leg)
T = 150 C
20 20 20 20
j
Thermal characteristics
Thermal resistance, junction-
R 0.50 0.50
0.50 0.50 C/W
JC
case (per leg)
Inch ponds
Mounting torque 30 30 30 30
(in-pb)
1
www.genesicsemi.com/silicon-products/schottky-rectifiers/MBR8045 thru MBR80100R
2
www.genesicsemi.com/silicon-products/schottky-rectifiers/