X-On Electronics has gained recognition as a prominent supplier of MBRT200100 Discrete Semiconductor Modules across the USA, India, Europe, Australia, and various other global locations. MBRT200100 Discrete Semiconductor Modules are a product manufactured by GeneSiC Semiconductor. We provide cost-effective solutions for Discrete Semiconductor Modules, ensuring timely deliveries around the world.
We are delighted to provide the MBRT200100 from our Discrete Semiconductor Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MBRT200100 and other electronic components in the Discrete Semiconductor Modules category and beyond.
MBRT20045 thru MBRT200100R V = 45 V - 100 V RRM Silicon Power I = 200 A F(AV) Schottky Diode Features High Surge Capability Three Tower Package Types from 45 V to 100 V V RRM Isolation Type Package Electrically Isolated Base Plate Not ESD Sensitive Maximum ratings, at T = 25 C, unless otherwise specified devices have leads reversed) j Conditions MBRT20080(R) MBRT200100(R) Parameter Symbol MBRT20045(R) MBRT20060(R) Unit Repetitive peak reverse voltage V 45 60 80 100 V RRM V RMS reverse voltage 32 42 56 70 V RMS V 80 100 DC blocking voltage 45 60 V DC T -55 to 150 -55 to 150 Operating temperature -55 to 150 -55 to 150 C j Storage temperature T -55 to 150 -55 to 150 -55 to 150 -55 to 150 C stg Electrical characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Conditions MBRT20045(R) MBRT20060(R) MBRT20080(R) MBRT200100(R) Unit Average forward current (per I T = 125 C 200 200 200 200 A F(AV) C pkg) Peak forward surge current I t = 8.3 ms, half sine 1500 1500 1500 1500 A FSM p (per leg) Maximum instantaneous V I = 100 A, T = 25 C 0.70 0.75 0.84 0.84 V F FM j forward voltage (per leg) T = 25 C 1 1 1 1 j Maximum instantaneous I T = 100 C reverse current at rated DC 10 10 10 10 mA R j blocking voltage (per leg) T = 150 C 30 30 30 30 j Thermal characteristics Thermal resistance, junction- R 0.45 0.45 0.45 0.45 C/W JC case (per leg) 1 Oct. 2018 MBRT20045 thru MBRT200100R 2 Oct. 2018