MBRT20060R GeneSiC Semiconductor

MBRT20045 thru MBRT200100R V = 45 V - 100 V RRM Silicon Power I = 200 A F(AV) Schottky Diode Features High Surge Capability Three Tower Package Types from 45 V to 100 V V RRM Isolation Type Package Electrically Isolated Base Plate Not ESD Sensitive Maximum ratings, at T = 25 C, unless otherwise specified devices have leads reversed) j Conditions MBRT20080(R) MBRT200100(R) Parameter Symbol MBRT20045(R) MBRT20060(R) Unit Repetitive peak reverse voltage V 45 60 80 100 V RRM V RMS reverse voltage 32 42 56 70 V RMS V 80 100 DC blocking voltage 45 60 V DC T -55 to 150 -55 to 150 Operating temperature -55 to 150 -55 to 150 C j Storage temperature T -55 to 150 -55 to 150 -55 to 150 -55 to 150 C stg Electrical characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Conditions MBRT20045(R) MBRT20060(R) MBRT20080(R) MBRT200100(R) Unit Average forward current (per I T = 125 C 200 200 200 200 A F(AV) C pkg) Peak forward surge current I t = 8.3 ms, half sine 1500 1500 1500 1500 A FSM p (per leg) Maximum instantaneous V I = 100 A, T = 25 C 0.70 0.75 0.84 0.84 V F FM j forward voltage (per leg) T = 25 C 1 1 1 1 j Maximum instantaneous I T = 100 C reverse current at rated DC 10 10 10 10 mA R j blocking voltage (per leg) T = 150 C 30 30 30 30 j Thermal characteristics Thermal resistance, junction- R 0.45 0.45 0.45 0.45 C/W JC case (per leg) 1 Oct. 2018 MBRT20045 thru MBRT200100R 2 Oct. 2018