MURF10040 thru MURF10060R
V = 50 V - 600 V
RRM
Silicon Super Fast
I = 100 A
F
Recovery Diode
Features
High Surge Capability TO-244AB Package
Types up to 600 V V
RRM
Maximum ratings, at T = 25 C, unless otherwise specified devices have leads reversed)
j
Parameter Symbol Conditions MURF10040 (R) MURF10060 (R) Unit
Repppetitive peak reverse
VV 400400 600600 VV
RRM
voltage
RMS reverse voltage V 280 420 V
RMS
V
DC blocking voltage 400 600 V
DC
T 140 C
Continuous forward current I 100 100 A
C
F
Surge non-repetitive forward
I T = 25 C, t = 8.3 ms
400 400 A
F,SM C p
current, Half Sine Wave
Operating temperature T -40 to 175 -40 to 175 C
j
T -40 to 175
Storage temperature -40 to 175 C
stg
Electrical characteristics, at Tj = 25 C, unless otherwise specified
Conditions MURF10060 (R)
Parameter Symbol MURF10040 (R) Unit
V = 50 A, T = 25 C
Diode forward voltage I 1.3 1.7 V
F F j
V = 50 V, T = 25 C 25
R j 25 A
I
Reverse current
R
V = 50 V, T = 125 C 1
1mA
R j
Recovery Time
I =0.5 A, I =1.0 A,
Maximum reverse recovery
F R
T 110
90 nS
RR
time I = 0.25 A
RR
www.genesicsemi.com 1MURF10040 thru MURF10060R
www.genesicsemi.com 2