S12G GeneSiC Semiconductor

S12B thru S12JR V = 100 V - 600 V RRM Silicon Standard I =12 A F Recovery Diode Features High Surge Capability DO-4 Package Types from 100 V to 600 V V RRM Not ESD Sensitive C A Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. A C Stud Stud 3. Stud is base. (R) Maximum ratings, at T = 25 C, unless otherwise specified devices have leads reversed) j Conditions S12G (R) S12J (R) Parameter Symbol S12B (R) S12D (R) Unit Repetitive peak reverse voltage V 100 200 400 600 V RRM V RMS reverse voltage 70 140 280 420 V RMS V 400 600 DC blocking voltage 100 200 V DC T 144 C Continuous forward current I 12 12 12 12 A F C Surge non-repetitive forward I T = 25 C, t = 8.3 ms 280 280 280 280 A F,SM C p current, Half Sine Wave T -55 to 150 -55 to 150 Operating temperature -55 to 150 -55 to 150 C j T -55 to 150 -55 to 150 Storage temperature -55 to 150 -55 to 150 C stg Electrical characteristics, at Tj = 25 C, unless otherwise specified Conditions S12G (R) S12J (R) Parameter Symbol S12B (R) S12D (R) Unit V I = 12 A, T = 25 C 1.1 1.1 V Diode forward voltage F F j 1.1 1.1 V = 50 V, T = 25 C 10 10 10 10 A R j I Reverse current R V = 50 V, T = 175 C 12 12 12 12 mA R j Thermal characteristics Thermal resistance, junction - R 2.50 2.50 2.50 2.50 C/W thJC case 1 Oct. 2018 A C A C Stud Stud (R) S12B thru S12JR 2 Oct. 2018