S85K thru S85QR V = 800 V - 1200 V RRM Silicon Standard I = 85 A F Recovery Diode Features High Surge Capability DO-5 Package Types from 800 V to 1200 V V RRM Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. Maximum ratings, at T = 25 C, unless otherwise specified devices have leads reversed) j Parameter Symbol Conditions S85K (R) S85M (R) S85Q (R) Unit Repppetitive peak reverse voltagge V 800 1000 1200 V RRM V 560 700 840 RMS reverse voltage V RMS V 800 1000 1200 V DC blocking voltage DC I T 140 C Continuous forward current 85 85 85 A F C Surge non-repetitive forward I T = 25 C, t = 8.3 ms 1800 1800 1800 A F,SM C p current, Half Sine Wave Operating temperature T -55 to 150 -55 to 150 -55 to 150 C j T -55 to 150 -55 to 150 -55 to 150 Storage temperature C stg Electrical characteristics, at Tj = 25 C, unless otherwise specified Conditions S85K (R) S85M (R) S85Q (R) Parameter Symbol Unit V I = 85 A, T = 25 C 1.1 1.1 1.1 V Diode forward voltage F F j V = 100 V, T = 25 C 10 10 10 R j A I Reverse current R V = 100 V, T = 180 C 99 9 mA R j Thermal characteristics Thermal resistance, junction - R 0.65 0.65 0.65 C/W thJC case 1 Feb 2016 Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/S85K thru S85QR 2 Feb 2016 Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/