GP2D003A060C Global Power Technologies

GP2D003A060C electronic component of Global Power Technologies
GP2D003A060C Global Power Technologies
GP2D003A060C Zener Diodes
GP2D003A060C  Semiconductors
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X-On Electronics has gained recognition as a prominent supplier of GP2D003A060C Zener Diodes across the USA, India, Europe, Australia, and various other global locations. GP2D003A060C Zener Diodes are a product manufactured by Global Power Technologies. We provide cost-effective solutions for Zener Diodes, ensuring timely deliveries around the world.

Part No. GP2D003A060C
Manufacturer: Global Power Technologies
Category: Zener Diodes
Description: Diode Silicon Carbide Schottky 600 V 3A Surface Mount TO-252-2L (DPAK)
Datasheet: GP2D003A060C Datasheet (PDF)
Price (USD)
N/A


Availability 0
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.7227
10$ 1.5356
25$ 1.4575
100$ 1.0931
250$ 1.0827
N/A

   
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Diode Type
Voltage - Dc Reverse Vr Max
Current - Average Rectified Io
Voltage - Forward Vf Max If
Speed
Reverse Recovery Time Trr
Current - Reverse Leakage Vr
Capacitance Vr F
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Operating Temperature - Junction
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We are delighted to provide the GP2D003A060C from our Zener Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the GP2D003A060C and other electronic components in the Zener Diodes category and beyond.

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GP2D003A060C VDC 600 V Q 7 nC C I 3 A F 600V SiC Schottky Diode TM TM TM Amp+ Features Amp+ Benefits Amp+ Applications High surge current capable Unipolar rectifier Motor drives Zero reverse recovery current Zero switching loss Switch mode power supplies High bandwidth Higher efficiency Power factor correction Fast, temperature-independent switching Smaller heat sink Parallel devices with thermal stability Part # Package Marking TO-252-2L GP2D003A060C 2D003A060 (DPAK) Maximum Rating Symbol Conditions Value Unit T =25 C, T =175 C C j 10 I T =125 C, T =175 C Continuous forward current F C j 5 T =150 C, T =175 C C j 3 A T =25 C, t =8.3 ms 24 Surge non-repetitive forward current C p I F,SM sine halfwave T =150 C, t =8.3 ms 15 C p Non-repetitive peak forward current I T =25 C, t =10 ms F,max C p 60 T =25 C, t =8.3 ms C p 2 2 2 2 i t value i dt A s T =150 C, t =8.3 ms C p 1 T =25 C Repetitive peak reverse voltage V 600 V RRM j Turn-on slew rate, repetitive Diode dv/dt ruggedness dv/dt 50 V/ns Power dissipation P T =25 C 36 W C tot Operating & storage temperature T , T Continuous -55175 C J storage Soldering temperature T Wave soldering leads C solder 260 Mounting torque M3 Screw N-m 1 Electrical Characteristics, at T =25 C, unless otherwise specified j Values Static Characteristics Symbol Conditions Unit min. typ. max. DC blocking voltage V I =0.1mA R 600 - - DC o V I =3A, T =25 C - 1.45 1.65 F j Diode forward voltage V F o I =3A, T =175 C - 1.65 2.00 F j o V =600V, T =25 C - 1.0 10 R j Reverse current I mA R o V =600V, T =175 C - 30 240 R j 8/27/2015 Rev 2 www.gptechgroup.com p.1TM 600V SiC Schottky Diode Amp + GP2D003A060C Values Parameter Symbol Conditions Unit min. typ. max. AC Characteristics o Total capacitive charge Q V =600V, T =25 C - 7 - nC C R j di /dt=200 A/ ms F Switching time t - - <10 ns C T =150 C j V =1 V, f=1 MHz - 158 - R Total capacitance C V =300V, f=1 MHz - 14 - pF R V =600V, f=1 MHz R - 11 - Thermal Characteristics o Thermal resistance, junction-case R Package (flange) mount - 4.18 - C/W thJC Typical Performance Fig. 2 Reverse Characteristics (parameterized on Tj) Fig. 1 Forward Characteristics (parameterized on T ) j 1.E-02 25C 25C 4 1.E-03 75C 75C 1.E-04 125C 125C 3 175C 175C 1.E-05 2 1.E-06 1.E-07 1 1.E-08 0 1.E-09 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 100 200 300 400 500 600 V (V) V (V) F R Fig. 3 Power Derating Fig. 4 Current Derating 40 35 o o 100% T =175 C T =175 C Duty cycle j j 35 30 50% 30 25 30% 25 20% 20 10% 20 15 15 10 10 5 5 0 0 25 75 125 175 25 75 125 175 o o T ( C) T ( C) C C 8/27/2015 Rev 2 www.gptechgroup.com p.2 P (W) I (A) Total F I (A) I (A) F R

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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