Product Information

GP2D030A120B

Product Image X-ON

Datasheet
Diode Silicon Carbide Schottky 1200 V 30A Through Hole TO-247-2
Manufacturer: Global Power Technologies



Price (USD)

120: USD 19.3588 ea
Line Total: USD 2323.056

0 - Global Stock
MOQ: 120 Multiples:120
Pack Size :   120
Availability Price Quantity
0 - Global Stock


Ships to you between Tue. 04 Apr to Mon. 10 Apr

MOQ : 120
Multiples : 120

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GP2D030A120B
Global Power Technologies

120 : USD 19.3588

     
Manufacturer
Global Power Technologies
Product Category
Zener Diodes
Package / Case
TO - 247 - 2
Packaging
Tube
Series
Amp +
Datasheets
Gp2d030a120b
Product Photos
Gdp15s120b
Standard Package
30
Category
Zener Diodes
Family
Diodes, Rectifiers - Single
Diode Type
Silicon Carbide Schottky
Voltage - Dc Reverse Vr Max
1200 V (1.2 kV)
Current - Average Rectified Io
30 A (DC)
Voltage - Forward Vf Max If
1.8 V @ 30a
Speed
Fast Recovery = 200Ma (Io)
Reverse Recovery Time Trr
-
Current - Reverse Leakage Vr
60 uA @ 1200v
Capacitance Vr F
1905p F @ 1v , 1mhz
Mounting Type
Through Hole
Supplier Device Package
TO - 247 - 2
Operating Temperature - Junction
- 55 C ~ 175 C
Online Catalog
Silicon Carbide Schottky
Other Names
1560 - 1054 - 5
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GP2D030A120B VDC 1200 V Q 129 nC C I 30 A F 1200V SiC Schottky Diode TM TM TM Amp+ Features Amp+ Benefits Amp+ Applications High surge current capable Unipolar rectifier Motor drives Zero reverse recovery current Zero switching loss Switch mode power supplies High bandwidth Higher efficiency Power factor correction Fast, temperature-independent switching Smaller heat sink Parallel devices with thermal stability Part # Package Marking GP2D030A120B TO-247-2L 2D030A120 Maximum Rating Symbol Conditions Value Unit T =25 C, T =175 C C j 94 I T =125 C, T =175 C Continuous forward current F C j 52 T =150 C, T =175 C C j 35 A T =25 C, t =8.3 ms 240 Surge non-repetitive forward current C p I F,SM sine halfwave T =150 C, t =8.3 ms 150 C p Non-repetitive peak forward current I T =25 C, t =10 ms F,max C p 600 T =25 C, t =8.3 ms C p 239 2 2 2 i t value i dt A s T =150 C, t =8.3 ms C p 93 T =25 C Repetitive peak reverse voltage V 1200 V RRM j Turn-on slew rate, repetitive Diode dv/dt ruggedness dv/dt 50 V/ns Power dissipation P T =25 C 500 W C tot Operating & storage temperature T , T Continuous -55175 C J storage Soldering temperature T Wave soldering leads C solder 260 Mounting torque M3 Screw N-m 1 Electrical Characteristics, at T =25 C, unless otherwise specified j Values Static Characteristics Symbol Conditions Unit min. typ. max. DC blocking voltage V I =0.1mA R 1200 - - DC o V I =30A, T =25 C - 1.60 1.80 F j Diode forward voltage V F o I =30A, T =175 C - 2.20 2.70 F j o V =1,200V, T =25 C - 5.0 60 R j Reverse current I mA R o V =1,200V, T =175 C - 170 1800 R j 8/27/2015 Rev 2 www.gptechgroup.com p.1TM 1200V SiC Schottky Diode Amp + GP2D030A120B Values Parameter Symbol Conditions Unit min. typ. max. AC Characteristics o Total capacitive charge Q V =1,200V, T =25 C - 129 - nC C R j di /dt=200 A/ ms F Switching time t - - <10 ns C T =150 C j V =1 V, f=1 MHz - 1905 - R Total capacitance C V =600V, f=1 MHz - 111 - pF R V =1,200V, f=1 MHz R - 108 - Thermal Characteristics o Thermal resistance, junction-case R Package (flange) mount - 0.30 - C/W thJC Typical Performance Fig. 2 Reverse Characteristics (parameterized on Tj) Fig. 1 Forward Characteristics (parameterized on T ) j 1.E-02 25C 25C 40 1.E-03 75C 75C 1.E-04 125C 125C 30 175C 175C 1.E-05 20 1.E-06 1.E-07 10 1.E-08 0 1.E-09 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 200 400 600 800 1,000 1,200 V (V) V (V) F R Fig. 3 Power Derating Fig. 4 Current Derating 600 350 o o 100% T =175 C T =175 C Duty cycle j j 300 500 50% 250 30% 400 20% 200 10% 300 150 200 100 100 50 0 0 25 75 125 175 25 75 125 175 o o T ( C) T ( C) C C 8/27/2015 Rev 2 www.gptechgroup.com p.2 P (W) I (A) Total F I (A) I (A) F R

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free