GT011N03ME GOFORD

GT011N03ME electronic component of GOFORD
GT011N03ME GOFORD
GT011N03ME MOSFETs
GT011N03ME  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of GT011N03ME MOSFETs across the USA, India, Europe, Australia, and various other global locations. GT011N03ME MOSFETs are a product manufactured by GOFORD. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. GT011N03ME
Manufacturer: GOFORD
Category: MOSFETs
Description: 30V 209A 1.28m@10V 2.5V 1PCSNChannel TO-263 MOSFETs ROHS
Datasheet: GT011N03ME Datasheet (PDF)
Price (USD)
1: USD 0.7524 ea
Line Total: USD 0.75 
Availability : 63
  
Ship by Fri. 05 Sep to Wed. 10 Sep
QtyUnit Price
1$ 0.7524
10$ 0.7334
30$ 0.5419
100$ 0.4785

Availability 63
Ship by Fri. 05 Sep to Wed. 10 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.7524
10$ 0.7334
30$ 0.5419
100$ 0.4785

   
Manufacturer
Product Category
Package
Continuous Drain Current Id
Type
Drain Source Voltage Vdss
Gate Threshold Voltage Vgsth@Id
Drain Source On Resistance Rdson@Vgs Id
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We are delighted to provide the GT011N03ME from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the GT011N03ME and other electronic components in the MOSFETs category and beyond.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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