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GS82582DT37GE-450I

GS82582DT37GE-450I electronic component of GSI Technology

Datasheet
SRAM 1.5/1.8V 8M x 36 288M

Manufacturer: GSI Technology
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 487.9472 ea
Line Total: USD 487.95

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
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0 - WHS 1


Ships to you between Fri. 24 May to Tue. 28 May

MOQ : 10
Multiples : 10

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GS82582DT37GE-450I
GSI Technology

10 : USD 502.961

     
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GS82582DT19/37GE-450/400/375/333 450 MHz333 MHz 165-Bump BGA TM 288Mb SigmaQuad-II+ 1.8 V V Commercial Temp DD Industrial Temp Burst of 4 SRAM 1.8 V and 1.5 V I/O just one element in a family of low power, low voltage HSTL Features I/O SRAMs designed to operate at the speeds needed to 2.0 clock Latency implement economical high performance networking systems. Simultaneous Read and Write SigmaQuad Interface JEDEC-standard pinout and package Clocking and Addressing Schemes Dual Double Data Rate interface Byte Write controls sampled at data-in time The GS82582DT19/37GE SigmaQuad-II+ SRAMs are Burst of 4 Read and Write synchronous devices. They employ two input register clock Dual-Range On-Die Termination (ODT) on Data (D), Byte inputs, K and K. K and K are independent single-ended clock Write (BW), and Clock (K, K) inputs inputs, not differential inputs to a single differential clock input 1.8 V +100/100 mV core power supply buffer. 1.5 V or 1.8 V HSTL Interface Pipelined read operation Each internal read and write operation in a SigmaQuad-II+ B4 Fully coherent read and write pipelines RAM is four times wider than the device I/O bus. An input ZQ pin for programmable output drive strength data bus de-multiplexer is used to accumulate incoming data Data Valid Pin (QVLD) Support before it is simultaneously written to the memory array. An IEEE 1149.1 JTAG-compliant Boundary Scan output data multiplexer is used to capture the data produced RoHS-compliant 165-bump BGA package from a single memory array read and then route it to the appropriate output drivers as needed. Therefore the address field of a SigmaQuad-II+ B4 RAM is always two address pins SigmaQuad Family Overview less than the advertised index depth (e.g., the 16M x 18 has a The GS82582DT19/37GE are built in compliance with the 4M addressable index). SigmaQuad-II+ SRAM pinout standard for Separate I/O synchronous SRAMs. They are 301,989,888-bit (288Mb) SRAMs. The GS82582DT19/37GE SigmaQuad SRAMs are Parameter Synopsis -450 -400 -375 -333 tKHKH 2.2 ns 2.5 ns 2.86 ns 3.0 ns tKHQV 0.45 ns 0.45 ns 0.45 ns 0.45 ns Rev: 1.03d 2/2020 1/26 2012, GSI Technology Specifications cited are subject to change without notice. For latest documentation see GS82582DT19/37GE-450/400/375/333 16M x 18 SigmaQuad-II+ SRAMTop View 1 2 3 4 5 6 7 8 9 10 11 A CQ SA SA W BW1 K SA R SA SA CQ B NC Q9 D9 SA NC K BW0 SA NC NC Q8 C NC NC D10 V SA NC SA V NC Q7 D8 SS SS D NC D11 Q10 V V V V V NC NC D7 SS SS SS SS SS E NC NC Q11 V V V V V NC D6 Q6 DDQ SS SS SS DDQ F NC Q12 D12 V V V V V NC NC Q5 DDQ DD SS DD DDQ G NC D13 Q13 V V V V V NC NC D5 DDQ DD SS DD DDQ H Doff V V V V V V V V V ZQ REF DDQ DDQ DD SS DD DDQ DDQ REF J NC NC D14 V V V V V NC Q4 D4 DDQ DD SS DD DDQ K NC NC Q14 V V V V V NC D3 Q3 DDQ DD SS DD DDQ L NC Q15 D15 V V V V V NC NC Q2 DDQ SS SS SS DDQ M NC NC D16 V V V V V NC Q1 D2 SS SS SS SS SS N NC D17 Q16 V SA SA SA V NC NC D1 SS SS P NC NC Q17 SA SA QVLD SA SA NC D0 Q0 R TDO TCK SA SA SA ODT SA SA SA TMS TDI 11 x 15 Bump BGA15 x 17 mm Body1 mm Bump Pitch Notes: 1. BW0 controls writes to D0:D8. BW1 controls writes to D9:D17. 2. A7 is the expansion address. Rev: 1.03d 2/2020 2/26 2012, GSI Technology Specifications cited are subject to change without notice. For latest documentation see

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory

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