X-On Electronics has gained recognition as a prominent supplier of GS880Z36CGT-250IV SRAM across the USA, India, Europe, Australia, and various other global locations. GS880Z36CGT-250IV SRAM are a product manufactured by GSI Technology. We provide cost-effective solutions for SRAM, ensuring timely deliveries around the world.

GS880Z36CGT-250IV GSI Technology

GS880Z36CGT-250IV electronic component of GSI Technology
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Part No.GS880Z36CGT-250IV
Manufacturer: GSI Technology
Category: SRAM
Description: SRAM 1.8/2.5V 256K x 36 9M
Datasheet: GS880Z36CGT-250IV Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
66: USD 32.328 ea
Line Total: USD 2133.65 
Availability - 0
MOQ: 66  Multiples: 66
Pack Size: 66
Availability Price Quantity
0
Ship by Wed. 13 Nov to Fri. 15 Nov
MOQ : 66
Multiples : 66
66 : USD 32.328
132 : USD 31.332

   
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We are delighted to provide the GS880Z36CGT-250IV from our SRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the GS880Z36CGT-250IV and other electronic components in the SRAM category and beyond.

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GS880Z18/32/36CT-xxxIV 250 MHz150 MHz 9Mb Pipelined and Flow Through 100-Pin TQFP 1.8 V or 2.5 V V DD Industrial Temp Synchronous NBT SRAM 1.8 V or 2.5 V I/O rail for proper operation. Asynchronous inputs include the Features Sleep mode enable (ZZ) and Output Enable. Output Enable can NBT (No Bus Turn Around) functionality allows zero wait be used to override the synchronous control of the output read-write-read bus utilization Fully pin-compatible with drivers and turn the RAM s output drivers off at any time. both pipelined and flow through NtRAM, NoBL and Write cycles are internally self-timed and initiated by the rising ZBT SRAMs edge of the clock input. This feature eliminates complex off- 1.8 V or 2.5 V +10%/10% core power supply chip write pulse generation required by asynchronous SRAMs 1.8 V or 2.5 V I/O supply and simplifies input signal timing. User-configurable Pipeline and Flow Through mode LBO pin for Linear or Interleave Burst mode The GS880Z18/32/36CT-xxxIV may be configured by the Pin compatible with 2M, 4M, and 18M devices user to operate in Pipeline or Flow Through mode. Operating Byte write operation (9-bit Bytes) as a pipelined synchronous device, meaning that in addition to 3 chip enable signals for easy depth expansion the rising edge triggered registers that capture input signals, the ZZ Pin for automatic power-down device incorporates a rising-edge-triggered output register. For JEDEC-standard 100-lead TQFP package read cycles, pipelined SRAM output data is temporarily stored RoHS-compliant 100-lead TQFP package available by the edge triggered output register during the access cycle and then released to the output drivers at the next rising edge of Functional Description clock. The GS880Z18/32/36CT-xxxIV is a 9Mbit Synchronous Static The GS880Z18/32/36CT-xxxIV is implemented with GSI s SRAM. GSI s NBT SRAMs, like ZBT, NtRAM, NoBL or high performance CMOS technology and is available in a other pipelined read/double late write or flow through read/ JEDEC-standard 100-pin TQFP package. single late write SRAMs, allow utilization of all available bus bandwidth by eliminating the need to insert deselect cycles when the device is switched from read to write cycles. Because it is a synchronous device, address, data inputs, and read/ write control inputs are captured on the rising edge of the input clock. Burst order control (LBO) must be tied to a power Parameter Synopsis -250I -200I -150I Unit t 3.0 3.0 3.8 ns KQ 4.0 5.0 6.7 ns tCycle Pipeline 3-1-1-1 Curr (x18) 195 170 145 mA Curr (x32/x36) 220 185 165 mA t 5.5 6.5 7.5 ns KQ 5.5 6.5 7.5 ns Flow Through tCycle 2-1-1-1 Curr (x18) 155 135 133 mA Curr (x32/x36) 175 160 145 mA Rev: 1.04 6/2012 1/23 2011, GSI Technology Specifications cited are subject to change without notice. For latest documentation see GS880Z18/32/36CT-xxxIV GS880Z18CT-xxxIV 100-Pin TQFP Pinout (Package T) 10099 989796959493929190898887868584838281 A NC 1 80 NC NC 2 79 NC NC 3 78 V V DDQ 4 77 DDQ V V 5 76 SS SS NC NC 6 75 DQPA 7 NC 74 DQA DQB 8 73 DQA DQB 9 72 512K x 18 V V 10 71 SS SS V V 11 Top View 70 DDQ DDQ DQA DQB 12 69 DQA 13 DQB 68 V 14 FT 67 SS NC V 15 66 DD V NC 16 65 DD ZZ V 17 64 SS DQA DQB 18 63 DQA 19 62 DQB V V 20 61 DDQ DDQ V V 21 60 SS SS DQA 22 DQB 59 23 DQA DQB 58 NC DQPB 24 57 NC 25 56 NC V 26 55 V SS SS V 27 54 V DDQ DDQ NC 28 53 NC 29 52 NC NC 30 NC NC 51 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 Note: Pins marked with NC can be tied to either V or V . These pins can also be left floating. DD SS Rev: 1.04 6/2012 2/23 2011, GSI Technology Specifications cited are subject to change without notice. For latest documentation see

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
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