Product Information

GS88118CGD-200I

GS88118CGD-200I electronic component of GSI Technology

Datasheet
SRAM 2.5 or 3.3V 512K x 18 9M

Manufacturer: GSI Technology
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

72: USD 11.7146 ea
Line Total: USD 843.45

0 - Global Stock
MOQ: 72  Multiples: 72
Pack Size: 72
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Ships to you between Thu. 16 May to Mon. 20 May

MOQ : 72
Multiples : 72

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GS88118CGD-200I
GSI Technology

72 : USD 12.0865
288 : USD 11.5805
504 : USD 11.5805
1008 : USD 11.523
2520 : USD 11.4425
5040 : USD 11.1205

     
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GS88118/32/36C(T/D)-xxxI 333 MHz150 MHz 512K x 18, 256K x 32, 256K x 36 100-pin TQFP & 165-bump BGA 2.5 V or 3.3 V V DD Industrial Temp 9Mb Sync Burst SRAMs 2.5 V or 3.3 V I/O Flow Through/Pipeline Reads Features The function of the Data Output register can be controlled by IEEE 1149.1 JTAG-compatible Boundary Scan the user via the FT mode pin (Pin 14). Holding the FT mode 2.5 V or 3.3 V +10%/10% core power supply pin low places the RAM in Flow Through mode, causing 2.5 V or 3.3 V I/O supply output data to bypass the Data Output Register. Holding FT LBO pin for Linear or Interleaved Burst mode high places the RAM in Pipeline mode, activating the rising- Internal input resistors on mode pins allow floating mode pins edge-triggered Data Output Register. Byte Write (BW) and/or Global Write (GW) operation Internal self-timed write cycle SCD Pipelined Reads Automatic power-down for portable applications The GS88118C(T/D)/GS88132C(88132CT/D)/GS88136C(T/ JEDEC-standard 100-lead TQFP and 165-bump BGA D) is a SCD (Single Cycle Deselect) pipelined synchronous packages SRAM. DCD (Dual Cycle Deselect) versions are also RoHS-compliant 100-lead TQFP and 165-bump BGA available. SCD SRAMs pipeline deselect commands one stage packages available less than read commands. SCD RAMs begin turning off their outputs immediately after the deselect command has been Functional Description captured in the input registers. Applications Byte Write and Global Write The GS88118C(T/D)/GS88132C(T/D)/GS88136C(T/D) is a Byte write operation is performed by using Byte Write enable 9,437,184-bit high performance synchronous SRAM with a 2- (BW) input combined with one or more individual byte write bit burst address counter. Although of a type originally signals (Bx). In addition, Global Write (GW) is available for developed for Level 2 Cache applications supporting high writing all bytes at one time, regardless of the Byte Write performance CPUs, the device now finds application in control inputs. synchronous SRAM applications, ranging from DSP main Sleep Mode store to networking chip set support. Low power (Sleep mode) is attained through the assertion Controls (High) of the ZZ signal, or by stopping the clock (CK). Addresses, data I/Os, chip enable (E1, E2), address burst Memory data is retained during Sleep mode. control inputs (ADSP, ADSC, ADV) and write control inputs Core and Interface Voltages (Bx, BW, GW) are synchronous and are controlled by a The GS88118C(T/D)/GS88132C(T/D)/GS88136C(T/D) positive-edge-triggered clock input (CK). Output enable (G) operates on a 2.5 V or 3.3 V power supply. All input are 3.3 V and power down control (ZZ) are asynchronous inputs. Burst and 2.5 V compatible. Separate output power (V ) pins are DDQ cycles can be initiated with either ADSP or ADSC inputs. In used to decouple output noise from the internal circuits and are Burst mode, subsequent burst addresses are generated 3.3 V and 2.5 V compatible. internally and are controlled by ADV. The burst address counter may be configured to count in either linear or interleave order with the Linear Burst Order (LBO) input. The Burst function need not be used. New addresses can be loaded on every cycle with no degradation of chip performance. Parameter Synopsis -333I -300I -250I -200I -150I Unit t 2.5 2.5 2.5 3.0 3.8 ns KQ 3.0 3.3 4.0 5.0 6.7 ns Pipeline tCycle 3-1-1-1 Curr (x18) 260 245 215 190 160 mA Curr (x32/x36) 300 280 245 215 180 mA t 4.5 5.0 5.5 6.5 7.5 ns KQ 4.5 5.0 5.5 6.5 7.5 ns Flow Through tCycle 2-1-1-1 Curr (x18) 200 185 180 160 148 mA Curr (x32/x36) 225 210 200 180 165 mA Rev: 1.04a 10/2012 1/35 2011, GSI Technology Specifications cited are subject to change without notice. For latest documentation see GS88118/32/36C(T/D)-xxxI GS88118C 100-Pin TQFP Pinout (Package T) 10099 989796959493929190898887868584838281 A NC 1 80 NC NC 2 79 NC NC 3 78 V V DDQ 4 77 DDQ V V 5 76 SS SS NC NC 6 75 DQPA 7 NC 74 DQA DQB 8 73 DQA DQB 9 72 512K x 18 V V 10 71 SS SS V V 11 Top View 70 DDQ DDQ DQA DQB 12 69 DQA 13 DQB 68 V 14 FT 67 SS NC V 15 66 DD V NC 16 65 DD ZZ V 17 64 SS DQA DQB 18 63 DQA 19 62 DQB V V 20 61 DDQ DDQ V V 21 60 SS SS DQA 22 DQB 59 23 DQA DQB 58 NC DQPB 24 57 NC 25 56 NC V 26 55 V SS SS V 27 54 V DDQ DDQ NC 28 53 NC 29 52 NC NC 30 NC NC 51 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 Note: Pins marked with NC can be tied to either V or V . These pins can also be left floating. DD SS Rev: 1.04a 10/2012 2/35 2011, GSI Technology Specifications cited are subject to change without notice. For latest documentation see

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory

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