GRF2013 Guerrilla RF

GRF2013 electronic component of Guerrilla RF
GRF2013 Guerrilla RF
GRF2013 RF Amplifier
GRF2013  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of GRF2013 RF Amplifier across the USA, India, Europe, Australia, and various other global locations. GRF2013 RF Amplifier are a product manufactured by Guerrilla RF. We provide cost-effective solutions for RF Amplifier, ensuring timely deliveries around the world.

Part No. GRF2013
Manufacturer: Guerrilla RF
Category: RF Amplifier
Description: RF Amplifier .05-8GHz NF 1.3dB Gain 18.5dB
Datasheet: GRF2013 Datasheet (PDF)
Price (USD)
1: USD 3.65 ea
Line Total: USD 3.65 
Availability : 29868
  
Ship by Mon. 18 Aug to Wed. 20 Aug
QtyUnit Price
1$ 3.65
10$ 2.2425
25$ 2.013
100$ 1.771
250$ 1.661
500$ 1.507
1000$ 1.353
2500$ 1.221
5000$ 1.21

Availability 29868
Ship by Mon. 18 Aug to Wed. 20 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 3.65
10$ 2.2425
25$ 2.013
100$ 1.771
250$ 1.661
500$ 1.507
1000$ 1.353
2500$ 1.221
5000$ 1.21


Availability 661
Ship by Wed. 20 Aug to Tue. 26 Aug
MOQ : 103
Multiples : 1
QtyUnit Price
103$ 2.535

   
Manufacturer
Product Category
RoHS - XON
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the GRF2013 from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the GRF2013 and other electronic components in the RF Amplifier category and beyond.

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GRF2013 Released Broadband Linear Gain Block 0.05 to 8.0 GHz Product Description GRF2013 is a broadband gain block with low noise fig- ure and high linearity designed for small cell, wireless infrastructure and other high performance applications. It exhibits outstanding broadband NF, linearity and re- turn losses over 0.7 to 3.8 GHz with a single match. Optimizing the bias inductor and coupling caps for lower Features frequency operation will yield strong performance down to 50 MHz. For applications above 4 GHz, the addition Reference: 5V/90mA/1.9 GHz of simple external matching yields outstanding linearity Gain: 18.5 dB and gain performance up to 8 GHz. OIP3: 38.5 dBm The device is operated from a supply voltage of 2.7 to 8.0V with a selectable Iddq range of 15 to 100 mA for OP1dB: 22.5 dBm optimal efficiency and linearity. NF: 1.3 dB Consult with the GRF applications engineering team for Reference: 8V/100mA/1.9 GHz custom tuning/evaluation board data. De-embedded s- parameters are available on the website landing page Gain: 18.5 dB for the device. OIP3: 41.0 dBm OP1dB: 25.3 dBm NF: 1.4 dB Low Noise Figure Flat Gain Flexible Biasing Internally Matched to 50 Process: GaAs pHEMT Applications Linear Driver Amplifier Small Cells and Cellular Repeaters IF Amplifier Wireless Backhaul TM TM Guerrilla RF Proprietary Information. Guerrilla RF and the composite logo of Guerrilla RF are trademarks of Guerrilla RF, Inc. 2014 Guerrilla RF, Inc. All rights reserved. Please contact Guerrilla RF at (+1) 336-510-7840 or sales guerrilla-rf.com Revision Date: 06/10/19 1 GRF2013 Released Broadband Linear Gain Block 0.05 to 8.0 GHz Absolute Ratings: Parameter Symbol Min. Max. Unit Supply Voltage VDD 0 9.0 V RF Input Power: (Load VSWR < 2:1 VD: <= 8.0 volts) PIN MAX 22 dBm Operating Temperature (Package Heat Sink) T -40 105 C AMB Maximum Channel Temperature (MTTF TMAX 170 C > 10 6 Hours) Maximum Dissipated Power PDISS MAX 1.0 W Electrostatic Discharge: Charged Device Model: CDM 1500 V Human Body Model: HBM 250 V Storage: Storage Temperature T -65 150 C STG Moisture Sensitivity Level MSL 1 -- Caution ESD Sensitive Device Exceeding Absolute Maximum Rating conditions may cause permanent damage to the device. Note: For manufacturing information, see the Guerrilla -RF.com website for the following docu- ment located on the GRF2013 landing page: Manufacturing NoteMN-001 Product Tape and Reel, Solderability and Package Outline Specicatifi on: Link to manufacturing note TM TM Guerrilla RF Proprietary Information. Guerrilla RF and the composite logo of Guerrilla RF are trademarks of Guerrilla RF, Inc. 2014 Guerrilla RF, Inc. All rights reserved. Please contact Guerrilla RF at (+1) 336-510-7840 or sales guerrilla-rf.com Revision Date: 06/10/19 2

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
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