PHOTODIODE Si PIN photodiode S1223 series For visible to IR, precision photometry Features Applications l High sensitivity l Optical measurement equipment l High reliability l Analytical equipment, etc. l High-speed response S1223: fc=30 MHz S1223-01: fc=20 MHz l Low capacitance General ratings Parameter Symbol S1223 S1223-01 Unit Window material - borosilicate glass - Package - TO-5 - Active area size A 2.4 2.8 3.6 3.6 mm 2 Effective active area - 6.6 13 mm Absolute maximum ratings Parameter Symbol S1223 S1223-01 Unit R Reverse voltage V Max. 30 V Power dissipation P 100 mW Operating temperature Topr -40 to +100 C Storage temperature Tstg -55 to +125 C Electrical and optical characteristics (Ta=25 C) S1223 S1223-01 Parameter Symbol Condition Unit Min. Typ. Max. Min. Typ. Max. 320 to 1100 320 to 1100 Spectral response range - -- -nm Peak sensitivity wavelength p - 960 - - 960 - nm =p -0.6 - - 0.6 - - 0.45 - - 0.45 - =660 nm Photo sensitivity S A/W =780 nm - 0.52 - - 0.52 - - 0.54 - - 0.54 - =830 nm Short circuit current Isc 100 lx 5 6.3 - 10 13 - A Dark current ID VR=20 V - 0.1 10 - 0.2 10 nA Temp. coefficient of ID TCID - 1.15 - - 1.15 - times/C Cut-off frequency fc VR=20 V, -3 dB - 30 - - 20 - MHz Terminal capacitance Ct VR=20 V, f=1 MHz - 10 - - 20 - pF -15 -14 1/2 Noise equivalent power NEP VR=20 V, =p - 9.4 10 - - 1.3 10 -W/Hz 1Si PIN photodiode S1223 series Spectral response Photo sensitivity temperature characteristic (Typ. Ta=25 C) (Typ.) 0.7 +1.5 0.6 +1.0 0.5 0.4 +0.5 0.3 0.2 0 0.1 0 -0.5 200 400 600 800 1000 200 400 600 800 1000 WAVELENGTH (nm) WAVELENGTH (nm) KPINB0144EA KPINB0143EA Dark current vs. reverse voltage Terminal capacitance vs. reverse voltage (Typ. Ta=25 C, f=1 MHz) (Typ. Ta=25 C) 1 nF 10 nA 1 nA 100 pF S1223-01 100 pA 10 pF S1223-01 10 pA S1223 S1223 1 pF 1 pA 0.1 1 10 100 0.1 1 10 100 REVERSE VOLTAGE (V) REVERSE VOLTAGE (V) KPINB0145EA KPINB0146EA Dimensional outline (unit: mm) 9.1 0.2 WINDOW 8.1 0.1 5.9 0.1 PHOTOSENSITIVE SURFACE 0.45 LEAD 5.08 0.2 The glass window may extend a CONNECTED TO CASE maximum of 0.2 mm above the upper surface of the cap. KPINA0073EA Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2006 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KPIN1050E01 Aug. 2006 DN 2 PHOTO SENSITIVITY (A/W) DARK CURRENT 2.8 20 4.1 0.2 TEMPERATURE COEFFICIENT (%/C) TERMINAL CAPACITANCE