HCG65200DBA HXY MOS

HCG65200DBA electronic component of HXY MOS
HCG65200DBA HXY MOS
HCG65200DBA GaN FETs
HCG65200DBA
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of HCG65200DBA GaN FETs across the USA, India, Europe, Australia, and various other global locations. HCG65200DBA GaN FETs are a product manufactured by HXY MOS. We provide cost-effective solutions for GaN FETs, ensuring timely deliveries around the world.

Part No. HCG65200DBA
Manufacturer: HXY MOS
Category: GaN FETs
Description: DFN-8L(5x6) GaN Transistors(GaN HEMT) ROHS
Datasheet: HCG65200DBA Datasheet (PDF)
Price (USD)
1: USD 5.7901 ea
Line Total: USD 5.79 
Availability : 79
  
Ship by Fri. 15 Aug to Wed. 20 Aug
QtyUnit Price
1$ 5.7901
10$ 3.8159
30$ 3.7544
100$ 3.6927

Availability 79
Ship by Fri. 15 Aug to Wed. 20 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 5.7901
10$ 3.8159
30$ 3.7544
100$ 3.6927

   
Manufacturer
Product Category
Package
Rohs
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We are delighted to provide the HCG65200DBA from our GaN FETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the HCG65200DBA and other electronic components in the GaN FETs category and beyond.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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