EiceDRIVER APD 2ED4820-EM 48 V smart high-side MOSFET gate driver with SPI Features Extended supply voltage range: 20 - 70 V Two independent high-side gate driver outputs 1 A pull down, 0.3 A pull up for fast switch off/on Device control, configuration and diagnostic via SPI Low supply current in sleep mode I < 5 A BAT Q Supports back-to-back MOSFET topologies (common drain and common source) One bidirectional high or low-side analog current sense interface with configurable gain Configurable overcurrent/short circuit protection Gate undervoltage lock-out Package Marking Safe state mode (both channels OFF) activated by direct input pin PG-TSDSO-24 2ED4820-EM Ground loss detection Potential applications 48 V battery protection switch 48 V input protection switch for DCDC converters, motor control unit etc. 48 V relay and fuse replacement CVBAT Low C C VCP CPHL Ohmic Path 5V or VBAT VCP CPH CPL 3.3V RG VDD GA C VDD RGS SA 2ED4820-EM MCU RProt GPIO CSN Capacitor GPIO SCLK Pre-Charge GPIO MOSI 48V Path Battery GPIO MISO R cells G GPIO INTERRUPT GB GPIO ENABLE RGS GPIO SAFESTATEN SB ADC CSO RFiltCSO C FiltCSO RPreCh RFiltSh ISN CFiltSh Shunt ISP LOAD(s) Freewheel. diode R FiltSh AGND GND EP CPGND Figure 1 48 V battery main switch application diagram Product validation Qualified for automotive applications. Product validation according to AEC-Q100 grade 1. Datasheet Please read the Important Notice and Warnings at the end of this document Rev. 1.00 www.infineon.com 2021-07-23 EiceDRIVER APD 2ED4820-EM 48 V smart high-side MOSFET gate driver with SPI Description Description 2ED4820-EM is a gate driver designed for high current 48 V automotive applications, with powerful gate outputs to drive many MOSFETs in parallel in order to minimize the conduction losses. It supports the back-to-back configuration, both common source and common drain structures, thanks to its two gate outputs. In common source configuration, one gate output can be used to pre-charge highly capacitive loads. 2ED4820-EM generates the supply for the gate outputs based on an integrated one-stage charge pump with external pump and tank capacitors. 2ED4820-EM comes with an SPI interface, for easy configuration, diagnosis and control. Several protection mechanisms are provided: Supply under- and overvoltage detection with configurable restart timer Charge pump undervoltage detection Gate to source undervoltage detection with immediate lock-out to prevent linear mode conduction of the MOSFETs Configurable drain to source overvoltage detection, which can also be deactivated Configurable overcurrent protection based on an analog current sense amplifier compatible for high-side or low-side shunt topologies Internal overtemperature warning and protection An interrupt pin informs the MCU whenever one of these protections is triggered. Status registers can then be read by the MCU to understand what was the trigger for the notification. The output of the current sense amplifier can be monitored by the MCU to implement additional protections, such as wire overtemperature. In addition, 2ED4820-EM enables to implement an open load detection mechanism, checking the source voltage of the MOSFETs with respect to ground in the OFF state. Datasheet 2 Rev. 1.00 2021-07-23