BCR166... PNP Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R = 4.7 k , R = 47 k ) 1 2 Pb-free (RoHS compliant) package Qualified according AEC Q101 BCR166 BCR166W C 3 R1 R 2 1 2 B E EHA07183 Type Marking Pin Configuration Package BCR166 WTs 1=B 2=E 3=C - - - SOT23 BCR166W WTs 1=B 2=E 3=C - - - SOT323 Maximum Ratings Parameter Symbol Value Unit 50 V Collector-emitter voltage V CEO 50 Collector-base voltage V CBO Input forward voltage V 30 i(fwd) Input reverse voltage V 5 i(rev) 100 mA Collector current I C mW Total power dissipation- P tot BCR166, T 102C 200 S BCR166W, T 124C 250 S 150 C Junction temperature T j Storage temperature T -65 ... 150 stg 2011-08-29 1BCR166... Thermal Resistance Parameter Symbol Value Unit 1) K/W Junction - soldering point R thJS BCR166 240 BCR166W 105 Electrical Characteristics at T = 25C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics 50 - - Collector-emitter breakdown voltage V V (BR)CEO I = 100 A, I = 0 C B Collector-base breakdown voltage V 50 - - (BR)CBO I = 10 A, I = 0 C E Collector-base cutoff current I - - 100 nA CBO V = 40 V, I = 0 CB E - - 155 A Emitter-base cutoff current I EBO V = 5 V, I = 0 EB C 2) 70 - - - DC current gain h FE I = 5 mA, V = 5 V C CE 2) Collector-emitter saturation voltage V - - 0.3 V CEsat I = 10 mA, I = 0.5 mA C B Input off voltage V 0.4 - 0.8 i(off) I = 100 A, V = 5 V C CE Input on voltage V 0.5 - 1.4 i(on) I = 2 mA, V = 0.3 V C CE Input resistor R 3.2 4.7 6.2 k 1 Resistor ratio R /R 0.09 0.1 0.11 - 1 2 AC Characteristics - 160 - MHz Transition frequency f T I = 10 mA, V = 5 V, f = 100 MHz C CE - 3 - pF Collector-base capacitance C cb V = 10 V, f = 1 MHz CB 1 For calculation of R please refer to Application Note AN077 (Thermal Resistance Calculation) thJA 2 Pulse test: t < 300s D < 2% 2011-08-29 2