BCR169... PNP Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R = 4.7 k ) 1 BCR169S: Two internally isolated transistors with good matching in one multichip package BCR169S: For orientation in reel see package information below 1) Pb-free (RoHS compliant) package Qualified according AEC Q101 BCR169/F/W BCR169S C C1 B2 E2 6 54 3 R 1 R 1 R 1 TR2 TR1 12 1 2 3 BE E1 B1 C2 EHA07180 EHA07266 Type Marking Pin Configuration Package BCR169 WSs 1=B 2=E 3=C - - - SOT23 BCR169F WSs 1=B 2=E 3=C - - - TSFP-3 BCR169S WSs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 BCR169W WSs 1=B 2=E 3=C - - - SOT323 1 Pb-containing package may be available upon special request 1 2007-08-02BCR169... Maximum Ratings Parameter Symbol Value Unit 50 V Collector-emitter voltage V CEO 50 Collector-base voltage V CBO Input forward voltage V 30 i(fwd) Input reverse voltage V 5 i(rev) 100 mA Collector current I C mW Total power dissipation P tot BCR169, T 102C 200 S BCR169F, T 128C 250 S BCR169S, T 115C 250 S BCR169W, T 124C 250 S 150 C Junction temperature T j Storage temperature T -65 ... 150 stg Thermal Resistance Parameter Symbol Value Unit 1) K/W Junction - soldering point R thJS BCR169 240 BCR169F 90 BCR169S 140 BCR169W 105 1 For calculation of R please refer to Application Note Thermal Resistance thJA 2 2007-08-02