BCR196... PNP Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R = 47k , R = 22k ) 1 2 Pb-free (RoHS compliant) package Qualified according AEC Q101 BCR196 BCR196W C 3 R1 R 2 1 2 B E EHA07183 Type Marking Pin Configuration Package BCR196 WXs 1=B 2=E 3=C - - - SOT23 BCR196W WXs 1=B 2=E 3=C - - - SOT323 Maximum Ratings Parameter Symbol Value Unit 50 V Collector-emitter voltage V CEO 50 Collector-base voltage V CBO Input forward voltage V 80 i(fwd) Input reverse voltage V 10 i(rev) 70 mA Collector current I C mW Total power dissipation- P tot BCR196, T 102C 200 S BCR196W, T 124C 250 S 150 C Junction temperature T j Storage temperature T 150 ... -65 stg 2011-08-30 1BCR196... Thermal Resistance Parameter Symbol Value Unit 1) K/W Junction - soldering point R thJS BCR196 240 BCR196W 105 Electrical Characteristics at T = 25C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics 50 - - Collector-emitter breakdown voltage V V (BR)CEO I = 100 A, I = 0 C B Collector-base breakdown voltage V 50 - - (BR)CBO I = 10 A, I = 0 C E Collector-base cutoff current I - - 100 nA CBO V = 40 V, I = 0 CB E - - 220 A Emitter-base cutoff current I EBO V = 10 V, I = 0 EB C 2) 50 - - - DC current gain h FE I = 5 mA, V = 5 V C CE 2) Collector-emitter saturation voltage V - - 0.3 V CEsat I = 10 mA, I = 0,5 mA C B Input off voltage V 1.2 - 2.6 i(off) I = 100 A, V = 5 V C CE Input on voltage V 1.5 - 4 i(on) I = 2 mA, V = 0,3 V C CE Input resistor R 32 47 62 k 1 Resistor ratio R /R 1.92 2.14 2.36 - 1 2 AC Characteristics - 150 - MHz Transition frequency f T I = 10 mA, V = 5 V, f = 100 MHz C CE - 3 - pF Collector-base capacitance C cb V = 10 V, f = 1 MHz CB 1 For calculation of R please refer to Application Note AN077 (Thermal Resistance Calculation) thJA 2 Pulse test: t < 300s D < 2% 2011-08-30 2