BCR512 NPN Silicon Digital Transistor Built in bias resistor (R = 4.7 k , R = 4.7 k ) 1 2 2 3 Pb-free (RoHS compliant) package 1 Qualified according AEC Q101 C 3 R 1 R 2 1 2 B E EHA07184 Type Marking Pin Configuration Package BCR512 XFs SOT23 1=B 2=E 3=C Maximum Ratings Parameter Symbol Value Unit 50 V Collector-emitter voltage V CEO 50 Collector-base voltage V CBO Input forward voltage V 30 i(fwd) Input reverse voltage V 10 i(rev) 500 mA Collector current I C 330 mW Total power dissipation- P tot T 79 C S 150 C Junction temperature T j Storage temperature T -65 ... 150 stg Thermal Resistance Parameter Symbol Value Unit 1) K/W Junction - soldering point R 215 thJS 1 For calculation of R please refer to Application Note AN077 (Thermal Resistance Calculation) thJA 2011-07-28 1BCR512 Electrical Characteristics at T = 25C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics 50 - - Collector-emitter breakdown voltage V V (BR)CEO I = 100 A, I = 0 C B Collector-base breakdown voltage V 50 - - (BR)CBO I = 10 A, I = 0 C E Collector-base cutoff current I - - 100 nA CBO V = 50 V, I = 0 CB E - - 1.61 mA Emitter-base cutoff current I EBO V = 10 V, I = 0 EB C 60 - - - DC current gain- h FE I = 50 mA, V = 5 V C CE 1) Collector-emitter saturation voltage V - - 0.3 V CEsat I = 50 mA, I = 2.5 mA C B Input off voltage V 0.6 - 1.5 i(off) I = 100 A, V = 5 V C CE Input on voltage V 1 - 2.2 i(on) I = 10 mA, V = 0.3 V C CE Input resistor R 3.2 4.7 6.2 k 1 Resistor ratio R /R 0.9 1 1.1 - 1 2 AC Characteristics - 100 - MHz Transition frequency f T I = 50 mA, V = 5 V, f = 100 MHz C CE 1 Pulse test: t < 300s D < 2% 2011-07-28 2