BCW61CE6327HTSA1 Infineon

BCW61..., BCX71... PNP Silicon AF Transistors For AF input stages and driver applications 2 3 High current gain 1 Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BCW60, BCX70 (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q101 Type Marking Pin Configuration Package BCW61A BAs 1=B 2=E 3=C SOT23 BCW61B BBs 1=B 2=E 3=C SOT23 BCW61C BCs 1=B 2=E 3=C SOT23 BCW61D BDs 1=B 2=E 3=C SOT23 BCX71G BGs 1=B 2=E 3=C SOT23 BCX71H BHs 1=B 2=E 3=C SOT23 BCX71J BJs 1=B 2=E 3=C SOT23 BCX71K BKs 1=B 2=E 3=C SOT23 2011-07-29 1BCW61..., BCX71... Maximum Ratings Parameter Symbol Value Unit V Collector-emitter voltage V CEO BCW61... 32 BCX71... 45 Collector-base voltage V CBO BCW61... 32 BCX71... 45 5 Emitter-base voltage V EBO 100 mA Collector current I C 200 Peak collector current, t 10 ms I p CM 200 Peak base current I BM 330 mW Total power dissipation- P tot T 71 C S 150 - Junction temperature T j C Storage temperature T -65 ... 150 stg Thermal Resistance Parameter Symbol Value Unit 1) K/W Junction - soldering point R 240 thJS 1 For calculation of R please refer to Application Note AN077 (Thermal Resistance Calculation) thJA 2011-07-29 2