BFP520F Low profile high gain silicon NPN RF bipolar transistor Product description The BFP520F is a low noise device based on a grounded emitter (SIEGET ) that is part of Infineons established fifth generation RF bipolar transistor family. Its transition frequency f of 45 GHz, high gain and low noise make the device suitable for applications T up to 15 GHz. It remains cost competitive without compromising on ease of use. Feature list Minimum noise figure NF = 0.95 dB at 1.8 GHz, 2 V, 2 mA min High gain G = 22.5 dB at 1.8 GHz, 2 V, 20 mA ms OIP = 23.5 dBm at 1.8 GHz, 2 V, 20 mA 3 Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Potential applications Radio-frequency oscillators such as local oscillator in LNB Broadband low noise amplifiers (LNAs) for CATV, DVB-T, DAB/DMB and FM/AM radio LNAs for wireless communications such as cordless phones Device information Table 1 Part information Product name / Ordering code Package Pin configuration Marking Pieces / Reel BFP520F / BFP520FH6327XTSA1 TSFP-4-1 1 = B 2 = E 3 = C 4 = E APs 3000 Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Datasheet Please read the Important Notice and Warnings at the end of this document Revision 2.0 www.infineon.com 2019-01-25BFP520F Low profile high gain silicon NPN RF bipolar transistor Table of contents Table of contents Product description 1 Feature list . 1 Product validation . 1 Potential applications 1 Device information . 1 Table of contents . 2 1 Absolute maximum ratings 3 2 Thermal characteristics . 4 3 Electrical characteristics 5 3.1 DC characteristics . 5 3.2 General AC characteristics 5 3.3 Frequency dependent AC characteristics .6 4 Package information TSFP-4-1 7 Revision history 8 Disclaimer . 9 Datasheet 2 Revision 2.0 2019-01-25