BFU725F/N1,115

BFU725F/N1 NPN wideband silicon germanium RF transistor Rev. 2 3 November 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. 1.2 Features and benefits Low noise high gain microwave transistor Noise figure (NF) = 0.7 dB at 5.8 GHz High maximum stable gain 27 dB at 1.8 GHz 110 GHz f silicon germanium technology T 1.3 Applications 2nd LNA stage and mixer stage in DBS LNBs Satellite radio Low noise amplifiers for microwave communications systems WLAN and CDMA applications Analog/digital cordless applications Ka band oscillators (DROs) 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-base voltage open emitter - - 10 V CBO V collector-emitter voltage open base - - 2.8 V CEO V emitter-base voltage open collector - - 1.0 V EBO I collector current - 25 40 mA C 1 P total power dissipation T 90 C - - 136 mW tot sp h DC current gain I =10mA V =2V 160 280 400 FE C CE T =25 C jBFU725F/N1 NXP Semiconductors NPN wideband silicon germanium RF transistor Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit C collector-base V =2V f=1MHz - 70 - fF CBS CB capacitance f transition frequency I =25mA V =2V -55 - GHz T C CE f= 2GHz T =25 C amb 2 G maximum power gain I =25mA V =2V -18 - dB p(max) C CE f= 5.8GHz T =25 C amb NF noise figure I =5mA V =2V -0.7 - dB C CE f= 5.8GHz = S opt T =25 C amb 1 T is the temperature at the solder point of the emitter lead. sp 2 G is the maximum power gain, if K > 1. If K < 1 then G = Maximum Stable Gain (MSG). p(max) p(max) 2. Pinning information Table 2. Discrete pinning Pin Description Simplified outline Graphic symbol 1emitter 34 4 2base 3emitter 2 4 collector 1, 3 2 1 mbb159 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BFU725F/N1 - plastic surface-mounted flat pack package reverse SOT343F pinning 4 leads 4. Marking Table 4. Marking Type number Marking Description BFU725F/N1 B7* * = p : made in Hong Kong * = t : made in Malaysia * = W : made in China BFU725F N1 All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 2 3 November 2011 2 of 12