BFR93AW Low Noise Silicon Bipolar RF Transistor For low distortion amplifiers and oscillators up to 2 GHz at collector currents from 3 2 5 mA to 30 mA 1 Pb-free (RoHS compliant) and halogen-free package with visible leads Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution Type Marking Pin Configuration Package BFR93AW R2s SOT323 1=B 2=E 3=C Maximum Ratings at T = 25 C, unless otherwise specified A Parameter Symbol Value Unit 12 V Collector-emitter voltage V CEO 20 Collector-emitter voltage V CES 20 Collector-base voltage V CBO 2 Emitter-base voltage V EBO 90 mA Collector current I C 9 Base current I B 1) 300 mW Total power dissipation P tot T 108 C S 150 C Junction temperature T J Ambient temperature T -65 ... 150 A Storage temperature T -65 ... 150 Stg Thermal Resistance Parameter Symbol Value Unit 2) K/W Junction - soldering point R 140 thJS 1 T is measured on the collector lead at the soldering point to the pcb S 2 For calculation of R please refer to Application Note AN077 (Thermal Resistance Calculation) thJS 2014-04-04 1BFR93AW Electrical Characteristics at T = 25 C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics 12 - - V Collector-emitter breakdown voltage V (BR)CEO I = 1 mA, I = 0 C B - - 100 A Collector-emitter cutoff current I CES V = 20 V, V = 0 CE BE - - 100 nA Collector-base cutoff current I CBO V = 10 V, I = 0 CB E - - 10 A Emitter-base cutoff current I EBO V = 2 V, I = 0 EB C 70 100 140 - DC current gain h FE I = 30 mA, V = 8 V, pulse measured C CE 2014-04-04 2