BGA420H6327XTSA1 Infineon

BGA420 in SIEGET 25-Technologie Si-MMIC-Amplifier Cascadable 50 -gain block 3 Unconditionally stable 2 4 2 Gain S = 13 dB at 1.8 GHz 21 1 IP = +13 dBm at 1.8 GHz 3out (V = 3 V, I = typ. 6.7 mA) D D Noise figure NF = 2.2 dB at 1.8 GHz V D Reverse isolation > 28 dB and 4 return loss IN / OUT > 12 dB at 1.8 GHz 3 OUT Pb-free (RoHS compliant) package Circuit Diagram 1 IN 2 GND EHA07385 ESD (Electrostatic discharge) sensitive device, observe handling precaution Type Marking Pin Configuration Package BGA420 BLs 1, IN 2, GND 3, OUT 4, VD SOT343 Maximum Ratings Parameter Symbol Value Unit 15 mA Device current I D 6 V Device voltage V D 90 mW Total power dissipation P tot T = 110 C S 0 dBm RF input power P RFin 150 C Junction temperature T j Ambient temperature T -65 ... 150 A Storage temperature T -65 ... 150 stg Thermal Resistance 1) K/W Junction - soldering point R 410 thJS 1 For calculation of R please refer to Application Note Thermal Resistance thJA 2011-07-26 1BGA420 Electrical Characteristics at T = 25 C, unless otherwise specified. A Parameter Symbol Values Unit min. typ. max. AC characteristics V = 3 V, Z = 50 D o 5.4 6.7 8 mA Device current I D 2 dB Insertion power gain S 21 f = 0.1 GHz 17 19 - f = 1 GHz 15 17 - f = 1.8 GHz 11 13 - 25 28 - Reverse isolation S12 f = 1.8 GHz Noise figure NF f = 0.1 GHz - 1.9 2.3 f = 1 GHz - 2.2 2.6 f = 1.8 GHz - 2.3 2.7 10 13 - dBm Intercept point at the output IP 3out f = 1 GHz -6 -2.5 - 1dB compression point P -1dB f = 1 GHz 8 11 - dB Return loss input RL in f = 1.8 GHz 12 16 - Return loss output RL out f = 1.8 GHz Typical biasing configuration +V D 100 pF RF OUT 100 pF 10 nF 4 3 BGA 420 12 100 pF GND RF IN EHA07386 Note: 1) Large-value capacitors should be connected from pin 4 to ground right at the device to provide a low impedance path. 2) The use of plated through holes right at pin 2 is essential for pc-board-applications. Thin boards are recommended to minimize the parasitic inductance to ground. 2011-07-26 2