BSS606NH6327XTSA1 Infineon

BSS606NH6327XTSA1 electronic component of Infineon
BSS606NH6327XTSA1 Infineon
BSS606NH6327XTSA1 MOSFETs
BSS606NH6327XTSA1  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BSS606NH6327XTSA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BSS606NH6327XTSA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. BSS606NH6327XTSA1
Manufacturer: Infineon
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; 1W; PG-SOT89
Datasheet: BSS606NH6327XTSA1 Datasheet (PDF)
Price (USD)
1: USD 0.74 ea
Line Total: USD 0.74 
Availability : 9890
  
Ship by Thu. 13 Nov to Mon. 17 Nov
QtyUnit Price
1$ 0.74
10$ 0.4787
100$ 0.2921
500$ 0.2211
1000$ 0.1969
2000$ 0.1617
5000$ 0.154
10000$ 0.154
25000$ 0.1507

Availability 9890
Ship by Thu. 13 Nov to Mon. 17 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.74
10$ 0.4787
100$ 0.2921
500$ 0.2211
1000$ 0.1969
2000$ 0.1617
5000$ 0.154
10000$ 0.154
25000$ 0.1507


Availability 630
Ship by Thu. 13 Nov to Mon. 17 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.812
10$ 0.6356
50$ 0.4508
76$ 0.2534
207$ 0.2394


Availability 4932
Ship by Mon. 17 Nov to Fri. 21 Nov
MOQ : 412
Multiples : 1
QtyUnit Price
412$ 0.6318
550$ 0.4732
767$ 0.3393
1000$ 0.338
2000$ 0.2475


Availability 51410
Ship by Mon. 17 Nov to Fri. 21 Nov
MOQ : 2000
Multiples : 1000
QtyUnit Price
2000$ 0.2266
2000$ 0.2005
3000$ 0.1939
5000$ 0.191
7000$ 0.1881
10000$ 0.1693
25000$ 0.158

   
Manufacturer
Product Category
Technology
Polarisation
Case
Mounting
Type Of Transistor
Drain-Source Voltage
Gate-Source Voltage
Drain Current
On-State Resistance
Power Dissipation
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BSS606NH6327XTSA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSS606NH6327XTSA1 and other electronic components in the MOSFETs category and beyond.

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BSS606N OptiMOS -3 Small-Signal-Transistor Product Summary Features V 60 V DS N-channel R V =10 V 60 mW DS(on),max GS Enhancement mode V =4.5 V 90 GS Logic level (4.5V rated) I 3.2 A D Avalanche rated Qualified according to AEC Q101 PG-SOT-89 100%lead-free Halogen-free RoHS compliant 4 1 2 3 Type Package Tape and Reel Information Marking Halogen-free Package BSS606N PG-SOT-89 H6327: 3000 pcs/ reel KE Yes Non-dry Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit I T =25C Continuous drain current 3.2 A D A T =70C 2.6 A I T =25C Pulsed drain current 12.8 D,pulse A E I =3.2A, R =25W Avalanche energy, single pulse 14 mJ AS D GS I =3.2A, V =48V, D DS Reverse diode dv /dt dv /dt di /dt =100A/s, 6 kV/s T =150C j,max V Gate source voltage 20 V GS 1) P T =25C 1.0 W Power dissipation tot A T , T Operating and storage temperature -55 ... 150 C j stg ESD Class JESD22-A114 -HBM class 0 (< 250V) Soldering Temperature 260 C IEC climatic category DIN IEC 68-1 55/150/56 1) Value refers to minimum footprint Rev 2.2 page 1 2013-04-03BSS606N Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, R - - 10 K/W thJC junction - case SMD version, device on PCB R minimal footprint - - 125 thJA 2 2) - - 70 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0V, I =250A 60 - - V (BR)DSS GS D Gate threshold voltage V V =0V, I =15A 1.3 1.8 2.3 GS(th) DS D V =60V, V =0V, DS GS Drain-source leakage current I - - 1 mA DSS T =25C j V =60V, V =0V, DS GS - - 100 T =150C j Gate-source leakage current I V =20V, V =0V - - 100 nA GSS GS DS R V =4.5V, I =2.6A Drain-source on-state resistance - 66 90 mW DS(on) GS D V =10V, I =3.2A - 47 60 GS D V >2 I R , DS D DS(on)max g Transconductance - 6 - S fs I =2.6A D 2) 2 Performed on 40mmx40mmx1.5mm epoxy FR4 PCB with 6cm (one layer, 70 m thick) copper area for drain connectio. PCB is vertical without blown air. Rev 2.2 page 2 2013-04-03

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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