Smart Low Side Power Switch Power HITFET BTS 118D Product Summary Features Drain source voltage V 42 V Logic Level Input DS On-state resistance R 100 m Input Protection (ESD) DS(on) Nominal load current I 2.4 A Thermal shutdown with auto restart D(Nom) Clamping energy E 2 J Green product (RoHS compliant) AS Overload protection Short circuit protection Overvoltage protection Current limitation P / PG-TO252-3-11 Analog driving possible Application All kinds of resistive, inductive and capacitive loads in switching or linear applications C compatible power switch for 12 V DC applications Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded protection functions. Vbb M Drain HITFET Pin 2 and 4 (TAB) Current Overvoltage- Limitation Protection In Gate-Driving Pin 1 Unit Over- Overload Short circuit temperature ESD Protection Protection Protection Pin 3 Source Complete product spectrum and additional information Smart Low Side Power Switch Power HITFET BTS 118D Maximum Ratings at T = 25C, unless otherwise specified j Parameter Symbol Value Unit 42 V Drain source voltage V DS Supply voltage for full short circuit protection V 42 bb(SC) 1) 2) Continuous input voltage V -0.2 ... +10 IN 2) Continuous input current I mA IN -0.2V V 10V self limited IN V < -0.2V or V > 10V I 2 IN IN IN C Operating temperature T -40 ...+150 j -55 ... +150 Storage temperature T stg 5) Power dissipation P W tot T = 85 C 21 C 2 6cm cooling area , T = 85 C 1.1 A 2) Unclamped single pulse inductive energy E 2 J AS 2)3) 58 V Load dump protection V = V + V V LoadDump A S LD V = 0 and 10 V, t = 400 ms, R = 2 , IN d I R = 6 ,V = 13.5 V L A 2) 2 kV V Electrostatic discharge voltage (Human Body Model) ESD according to Jedec norm EIA/JESD22-A114-B, Section 4 Thermal resistance 3 K/W junction - case: R thJC SMD: junction - ambient R thJA min. footprint 115 2 4) 6 cm cooling area 55 1 For input voltages beyond these limits I has to be limited. IN 2 not subject to production test, specified by design 3 V is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 Loaddump 4 2 (one layer, 70m thick) copper area for drain Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm connection. PCB mounted vertical without blown air. 5 not subject to production test, calculated by R and R thJA ds(on) Datasheet 2 Rev. 1.3, 2006-12-22