Product Information

BTS555E3146HKSA1

BTS555E3146HKSA1 electronic component of Infineon

Datasheet
Infineon Technologies Power Switch ICs - POE LAN Smart High Side High Current PROFET

Manufacturer: Infineon
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - Global Stock


Multiples : 250
N/A

Obsolete
0 - Global Stock

MOQ : 1
Multiples : 1
1 : USD 10.3309
10 : USD 9.2642
25 : USD 8.8157
100 : USD 8.1879
250 : USD 7.8163
500 : USD 7.4319
1000 : USD 7.0474
2500 : USD 7.0346
5000 : USD 6.5093
N/A

Obsolete
0 - Global Stock

MOQ : 250
Multiples : 250
250 : USD 6.2127
500 : USD 6.0718
1000 : USD 6.0108
2500 : USD 5.7255
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Packaging
Brand
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PROFET Data Sheet BTS555 Smart Highside High Current Power Switch Product Summary Reversave Reverse battery protection by self turn on of Overvoltage protection V 62V bb(AZ) power MOSFET V V Output clamp 44 ON(CL) Features V 5.0 ... 34 V Operating voltage bb(on) Overload protection On-state resistance R 2.5 ON m Current limitation Short circuit protection Load current (ISO) I 165A L(ISO) Overtemperature protection Short circuit current limitation I 520 A L(SCp) Overvoltage protection (including load dump) Current sense ratio I : I 30 000 L Clamp of negative voltage at output IS 1) Fast deenergizing of inductive loads Low ohmic inverse current operation PG-TO218-5-146 Diagnostic feedback with load current sense Open load detection via current sense 2) Loss of V protection bb 5 Electrostatic discharge (ESD) protection Green Product (RoHS compliant) 1 AEC qualified Straight leads Application Power switch with current sense diagnostic feedback for 12 V and 24 V DC grounded loads Most suitable for loads with high inrush current like lamps and motors all types of resistive and inductive loads Replaces electromechanical relays, fuses and discrete circuits General Description N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load current sense, integrated in Smart SIPMOS chip on chip technology. Providing embedded protective functions. 3 & Tab + V bb R bb Voltage Overvoltage Current Gate source limit protection protection 1, 5 OUT Limit for Voltage Charge pump unclamped I L sensor ind. loads Level shifter Current Sense Rectifier Output 2 Voltage Load IN Logic ESD detection I IN Temperature sensor I IS PROFET IS Load GND 4 V IN R V IS IS Logic GND ) 1 With additional external diode. 2) Additional external diode required for energized inductive loads (see page 9). Infineon Technologies AG 1 of 16 2010-June-01 Data Sheet BTS555 Pin Symbol Function Output to the load. The pins 1 and 5 must be shorted with each other 1 OUT 3) especially in high current applications 2 IN Input, activates the power switch in case of short to ground Positive power supply voltage, the tab is electrically connected to this pin. 3 V bb In high current applications the tab should be used for the V connection bb 4) instead of this pin . Diagnostic feedback providing a sense current proportional to the load 4 IS current zero current on failure (see Truth Table on page 7) Output to the load. The pins 1 and 5 must be shorted with each other 5 OUT 3) especially in high current applications Maximum Ratings at Tj = 25 C unless otherwise specified Parameter Symbol Values Unit Supply voltage (see page 4 and 5) V 40V bb Supply voltage for full short circuit protection, V 34V bb (E limitation see diagram on page 10) T =-40C+150C: j,start AS Load current (short circuit current, see page 5) I self-limited A L Load dump protection V = U + V , U = 13.5 V LoadDump A s A 5) 6) 80 V R = 2 , R = 0.1 , t = 200 ms, V I L d Load dump IN, IS = open or grounded Operating temperature range T -40 ...+150 C j -55 ...+150 Storage temperature range T stg Power dissipation (DC), T 25 C P 360W C tot Inductive load switch-off energy dissipation, single pulse V = 12V, T = 150C, T = 150C const., j,start C 3J E bb AS I = 20 A, Z = 15 mH, 0 , see diagram on page 10 L L Electrostatic discharge capability (ESD) V 4.0kV ESD Human Body Model acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993, C = 100 pF, R = 1.5 k Current through input pin (DC) I +15 , -250 mA IN Current through current sense status pin (DC) I +15 , -250 IS see internal circuit diagrams on page 8 and 9 3) Not shorting all outputs will considerably increase the on-state resistance, reduce the peak current capability and decrease the current sense accuracy 4) Otherwise add up to 0.5 m (depending on used length of the pin) to the R if the pin is used instead of the ON tab. 5) R = internal resistance of the load dump test pulse generator. I 6) V is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839. Load dump Infineon Technologies AG 2 2010-June-01

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
CYP
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION

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