Product Information

CY621282BNLL-70SXET

CY621282BNLL-70SXET electronic component of Infineon

Datasheet
SRAM 1Mb 70ns 128K x 8 Low Power SRAM

Manufacturer: Infineon
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1
1 : USD 5.46
10 : USD 5.2245
25 : USD 5.2073
50 : USD 5.1031
N/A

Obsolete
0 - WHS 2

MOQ : 1000
Multiples : 1
1000 : USD 8.4299
N/A

Obsolete
0 - WHS 3

MOQ : 1
Multiples : 1
1 : USD 8.558
10 : USD 5.8305
25 : USD 5.7062
50 : USD 5.6856
100 : USD 5.2402
250 : USD 5.0849
500 : USD 4.8363
1000 : USD 4.6499
N/A

Obsolete
0 - WHS 4

MOQ : 2
Multiples : 2
2 : USD 5.46
10 : USD 5.2245
25 : USD 5.2073
50 : USD 5.1031
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Memory Size
Organization
Access Time
Supply Voltage - Max
Supply Voltage - Min
Maximum Operating Temperature
Minimum Operating Temperature
Mounting Style
Package / Case
Packaging
Interface
Memory Type
Series
Type
Brand
Maximum Operating Current
Factory Pack Quantity :
Tradename
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CY621282BN MoBL Automotive 1-Mbit (128 K 8) Static RAM 1-Mbit (128 K 8) Static RAM Features Functional Description Temperature Ranges The CY621282BN is a high-performance CMOS static RAM organized as 128K words by 8 bits. Easy memory expansion is Automotive-E: 40 C to 125 C provided by an active LOW Chip Enable (CE ), an active HIGH 1 4.5 V to 5.5 V operation Chip Enable (CE ), and active LOW Output Enable (OE). This 2 device has an automatic power-down feature that reduces power Complementary metal oxide semiconductor (CMOS) for consumption by more than 75% when deselected. optimum speed/power Writing to the device is accomplished by taking Chip Enable One Low active power (CE ) and Write Enable (WE) inputs LOW and Chip Enable Two 1 137.5 mW (max.) (25 mA) (CE ) input HIGH. Data on the eight I/O pins (I/O through I/O ) 2 0 7 is then written into the location specified on the address pins (A Low standby power 0 through A ). 137.5 W (max.) (25 A) 16 Reading from the device is accomplished by taking Chip Enable Automatic power-down when deselected One (CE ) and Output Enable (OE) LOW while forcing Write 1 TTL-compatible inputs and outputs Enable (WE) and Chip Enable Two (CE ) HIGH. Under these 2 conditions, the contents of the memory location specified by the Easy memory expansion with CE , CE , and OE options 1 2 address pins will appear on the I/O pins. Available in Pb-free 32-pin (450 mil-wide) small outline The eight input/output pins (I/O through I/O ) are placed in a 0 7 integrated circuit (SOIC) package high-impedance state when the device is deselected (CE HIGH 1 or CE LOW), the outputs are disabled (OE HIGH), or during a 2 write operation (CE LOW, CE HIGH, and WE LOW). 1 2 Logic Block Diagram I/O 0 INPUT BUFFER I/O 1 A 0 A 1 I/O 2 A 2 A 3 A 4 I/O 128K x 8 3 A 5 ARRAY A 6 I/O 4 A 7 A 8 I/O 5 I/O 6 POWER COLUMN CE DOWN 1 DECODER CE 2 I/O 7 WE OE Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document : 001-65526 Rev. *B Revised March 5, 2012 ROW DECODER A 8 A 9 A 10 A 11 A 12 A 13 A 14 A 15 SENSE AMPS CY621282BN MoBL Automotive Contents Product Portfolio ..............................................................3 Truth Table ...................................................................... 10 Pin Configuration .............................................................3 Ordering Information ...................................................... 10 Pin Definitions ..................................................................3 Ordering Code Definitions ......................................... 10 Maximum Ratings .............................................................4 Package Diagrams .......................................................... 11 Operating Range ...............................................................4 Acronyms ........................................................................12 Electrical Characteristics .................................................4 Document Conventions ................................................. 12 Capacitance ......................................................................5 Units of Measure ....................................................... 12 Thermal Resistance ..........................................................5 Document History Page ................................................. 13 AC Test Loads and Waveforms .......................................5 Sales, Solutions, and Legal Information ...................... 14 Data Retention Waveform ................................................6 Worldwide Sales and Design Support ....................... 14 Data Retention Characteristics .......................................6 Products ....................................................................14 Switching Characteristics ................................................7 PSoC Solutions ......................................................... 14 Switching Waveforms ......................................................8 Document : 001-65526 Rev. *B Page 2 of 14

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
CYP
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION

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