Product Information

CY7C433-15JC

Product Image X-ON

Datasheet
FIFO Mem Async Dual Depth/Width Uni-Dir 4K x 9 32-Pin PLCC
Manufacturer: Infineon



Price (USD)

3: USD 41.1615 ea
Line Total: USD 123.4845

100 - Global Stock
Ships to you between
Fri. 31 Mar to Thu. 06 Apr
MOQ: 3 Multiples:1
Pack Size :   1
Availability Price Quantity
100 - Global Stock


Ships to you between Fri. 31 Mar to Thu. 06 Apr

MOQ : 1
Multiples : 1

Stock Image

CY7C433-15JC
Infineon

1 : USD 41.1615
25 : USD 25.4125
100 : USD 19.0625

100 - Global Stock


Ships to you between Fri. 31 Mar to Thu. 06 Apr

MOQ : 3
Multiples : 1

Stock Image

CY7C433-15JC
Infineon

3 : USD 41.1615
25 : USD 25.4125
100 : USD 19.0625

     
Manufacturer
Infineon
Product Category
FIFO
RoHS - XON
1 Icon ROHS
Data Bus Width
9 (b)
Bus Direction
Uni - Directional
Timing Type
Asynchronous
Organisation
4Kx9
Maximum Clock Frequency
not required MHz
Access Time
15 ns
Supply Voltage - Max
5.5 V
Supply Voltage - Min
4.5 V
Supply Current - Max
65 mA
Package / Case
PLCC
Brand
Infineon
Mounting Style
Surface Mount
Operating Temp Range
0 C To 70 C
Pin Count
32
Density
36864(Bit)
Operating Temperature Classification
commercial
Expandable
Yes
Configuration
Dual
Rad Hardened
No
Operating Supply Voltage Typ
5 V
Deleted
Not Compliant
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CY7C419/21/25/29/33256/512/1K/2K/4K x 9 Asynchronous FIFO CY7C419/21/25/29/33 256/512/1K/2K/4K x 9 Asynchronous FIFO Features Functional Description Asynchronous First-In First-Out (FIFO) Buffer Memories The CY7C419, CY7C420/1, CY7C424/5, CY7C428/9, and CY7C432/3 are first-in first-out (FIFO) memories offered in 256 x 9 (CY7C419) 600-mil wide and 300-mil wide packages. There are 256, 512, 512 x 9 (CY7C421) 1,024, 2,048, and 4,096 words respectively by 9 bits wide. Each 1K x 9 (CY7C425) FIFO memory is organized such that the data is read in the same 2K x 9 (CY7C429) sequential order that it was written. Full and empty flags are 4K x 9 (CY7C433) provided to prevent overrun and underrun. Three additional pins are also provided to facilitate unlimited expansion in width, depth, Dual-Ported RAM Cell or both. The depth expansion technique steers the control High Speed 50 MHz Read and Write Independent of Depth and signals from one device to another in parallel. This eliminates the Width serial addition of propagation delays, so that throughput is not reduced. Data is steered in a similar manner. Low Operating Power: I = 35 mA CC The read and write operations may be asynchronous each can Empty and Full Flags (Half Full Flag in Standalone) occur at a rate of 50 MHz. The write operation occurs when the write (W) signal is LOW. Read occurs when read (R) goes LOW. TTL Compatible The nine data outputs go to the high impedance state when R is Retransmit in Standalone HIGH. Expandable in Width A Half Full (HF) output flag that is valid in the standalone and width expansion configurations is provided. In the depth PLCC, 7x7 TQFP, SOJ, 300-mil, and 600-mil DIP expansion configuration, this pin provides the expansion out (XO) information that is used to tell the next FIFO that it is Pb-free Packages Available activated. Pin Compatible and Functionally Equivalent to IDT7200, In the standalone and width expansion configurations, a LOW on IDT7201, IDT7202, IDT7203, IDT7204, AM7200, AM7201, the retransmit (RT) input causes the FIFOs to retransmit the AM7202, AM7203, and AM7204 data. Read enable (R) and write enable (W) must both be HIGH during retransmit, and then R is used to access the data. The CY7C419, CY7C420, CY7C421, CY7C424, CY7C425, CY7C428, CY7C429, CY7C432, and CY7C433 are fabricated using an advanced 0.65-micron P-well CMOS technology. Input ESD protection is greater than 2000V and latch up is prevented by careful layout and guard rings. Table 1. Selection Guide 4K x 9 10 15 20 25 30 40 65 Frequency (MHz) 50 40 33.3 28.5 25 20 12.5 Maximum Access Time (ns) 10 15 20 25 30 40 65 I (mA) 35 35 35 35 35 35 35 CC1 Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document : 38-06001 Rev. *D Revised June 03, 2009 + Feedback + Feedback + Feedback CY7C419/21/25/29/33 Logic Block Diagram DATA INPUTS (D D ) 0 8 WRITE W RAM ARRAY CONTROL 256x 9 512x 9 WRITE 1024x 9 READ POINTER 2048x 9 POINTER 4096x 9 THREE- STATE BUFFERS DATA OUTPUTS (Q Q ) 0 8 MR RESET LOGIC FL/RT READ R CONTROL FLAG EF LOGIC FF EXPANSION LOGIC XI XO/HF Pin Configurations Figure 1. 32-Pin PLCC/LCC (Top View) Figure 2. 28-Pin DIP (Top View) Figure 3. 32-PIn TQFP (Top View) 1 28 V W cc 2 27 D D 8 4 32 3130 29 28 27 26 25 4 3 2 1 323130 3 26 D D D 3 5 2 D D 5 29 6 7 D 1 24 1 4 D 25 D 2 6 D D 1 6 28 7 FL/RT D 0 2 23 5 D 24 D NC 1 D 7 27 7 0 7C419 NC NC 3 22 6 D 23 FL/RT XI FL/RT 0 8 26 7C420/1 7C419 7C419 7 22 NC 4 21 NC XI 7C424/5 MR FF 9 7C421/5/9 25 MR 7C421/5/9 7C428/9 XI FF 8 21 5 20 MR 7C433 EF 7C433 Q EF 0 10 24 7C432/3 Q FF 9 20 EF 0 XO/HF 6 19 Q 1 11 23 XO/HF 10 Q 19 Q Q NC Q 1 0 XO/HF 12 22 7 7 7 18 11 Q 18 Q Q Q2 Q 2 6 1 Q 13 21 6 8 17 7 14 15 1617 181920 Q 12 Q 3 17 5 9 101112131415 16 Q 13 16 Q 8 4 14 15 GND R Document : 38-06001 Rev. *D Page 2 of 16 + Feedback + Feedback + Feedback Q D 3 3 Q D 8 8 GND W NC NC R V cc Q D 4 4 Q D 5 5 Q D 2 2 Q 3 D 3 Q 8 D 8 GND W R V CC Q 4 D 4 Q 5 D 5 Q D 6 6

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
CYP
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION