F3L200R12W2H3B11BPSA1 Infineon

F3L200R12W2H3B11BPSA1 electronic component of Infineon
F3L200R12W2H3B11BPSA1 Infineon
F3L200R12W2H3B11BPSA1 IGBT Modules
F3L200R12W2H3B11BPSA1  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of F3L200R12W2H3B11BPSA1 IGBT Modules across the USA, India, Europe, Australia, and various other global locations. F3L200R12W2H3B11BPSA1 IGBT Modules are a product manufactured by Infineon. We provide cost-effective solutions for IGBT Modules, ensuring timely deliveries around the world.

Part No. F3L200R12W2H3B11BPSA1
Manufacturer: Infineon
Category: IGBT Modules
Description: IGBT, MODULE, N-CH, 1.2KV, 100A
Datasheet: F3L200R12W2H3B11BPSA1 Datasheet (PDF)
Price (USD)
1: USD 144.9469 ea
Line Total: USD 144.95 
Availability : 0
  
QtyUnit Price
1$ 144.9469
10$ 131.5806
100$ 129.0504

Availability 0
Ship by Mon. 17 Nov to Fri. 21 Nov
MOQ : 15
Multiples : 1
QtyUnit Price
15$ 83.3962
25$ 82.5563
50$ 81.7294
100$ 80.9156
250$ 80.1019
500$ 79.3012
1000$ 78.5137
2500$ 77.7262
5000$ 76.9519
10000$ 76.1775


Availability 0
Ship by Mon. 17 Nov to Fri. 21 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 144.9469
10$ 131.5806
100$ 129.0504


Availability 0
Ship by Mon. 17 Nov to Fri. 21 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 82.0883


Availability 0
Ship by Mon. 17 Nov to Fri. 21 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 91.7881

   
Manufacturer
Product Category
Brand
Transistor Polarity
Dc Collector Current
Collector Emitter Saturation Voltage Vceon
Power Dissipation Pd
Collector Emitter Voltage Vbrceo
Transistor Case Style
Operating Temperature Max
Product Range
Svhc
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the F3L200R12W2H3B11BPSA1 from our IGBT Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the F3L200R12W2H3B11BPSA1 and other electronic components in the IGBT Modules category and beyond.

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Product / Process Change Notification N 2017-040-A Dear Customer, Please find attached our INFINEON Technologies PCN: Introduction of additional wafer production site with 12 Wafer diameter for IGBT4 1200V (T4) and IGBT HighSpeed 3 (H3) technology. Important information for your attention: Please respond to this PCN by indicating your decision on the approval form, sign it and return to your sales partner before 30. May 2017. Infineon aligns with the widely-recognized JEDEC STANDARD JESD46, which stipulates: Lack of acknowledgement of the PCN within 30 days constitutes acceptance of the change. Your prompt reply will help Infineon Technologies to assure a smooth and well executed transition. If Infineon does not hear from your side by the due date, we will assume your full acceptance to this proposed change and its implementation. Your attention and response to this matter is greatly appreciated. Infineon Technologies AG Postal Address Headquarters: Am Campeon 1-12, D-85579 Neubiberg, Phone +49 (0)89 234-0 Chairman of the Supervisory Board: Wolfgang Mayrhuber Management Board: Dr. Reinhard Ploss (CEO), Dominik Asam, Dr. Helmut Gassel, Jochen Hanebeck Registered Office: Neubiberg Commercial Register Amtsgericht Mnchen HRB 126492 2017-04-18 Page 1 of 2 Product / Process Change Notification N 2017-040-A Sales Name SP N OPN Package Products affected: 1200V IGBT4 Modules Please refer to attached affected product list 1 cip17040a Detailed Change Information: Introduction of additional wafer production site with Subject: - 12 inch (300mm) wafer diameter capability for IGBT Chips Capacity extension and increasing security of supply 1200V IGBT4 and Reason: IGBT HighSpeed 3 For IGBT products 12 wafer manufacturing technology is meanwhile the established technology at IFX Old New Description: IGBT IGBT 8 inch: 8 inch: - Front end Villach/ Austria - Front end Villach, Austria - Front end Kulim/ Malaysia - Front end Kulim/ Malaysia 12 inch: - Front end Dresden/ Germany Target production site front end Dresden/ Germany 12 inch Individual module material number. Product Identification: See attached list of affected products 1 cip17040a No impact on electrical performance. Quality and reliability verified by Impact of Change: qualification. There is no change in form, fit and function There is no change in the assembly process at Infineon. Affected product list 1 cip17040a Attachment: Time Schedule: Final qualification report: On request First samples available: On request Intended start of delivery: 01-Sept-2017 or directly after customer approval If you have any questions, please do not hesitate to contact your local Sales office. 2017-04-18 Page 2 of 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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