Technische Information / Technical Information IGBT-Module FF200R17KE4 IGBT-modules 62mm C-Serien Modul mit schnellem Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode 62mm C-Series module with fast Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode Vorlufige Daten / Preliminary Data VCES = 1700V I = 200A / I = 400A C nom CRM Typische Anwendungen Typical Applications Hochleistungsumrichter High Power Converters Motorantriebe Motor Drives USV-Systeme UPS Systems Windgeneratoren Wind Turbines Elektrische Eigenschaften Electrical Features Erweiterte Sperrschichttemperatur T vj op Extended Operation Temperature Tvj op Niedriges V Low V CEsat CEsat Sehr groe Robustheit Unbeatable Robustness V mit positivem Temperaturkoeffizienten V with positive Temperature Coefficient CEsat CEsat Mechanische Eigenschaften Mechanical Features 4 kV AC 1min Isolationsfestigkeit 4 kV AC 1min Insulation Gehuse mit CTI > 400 Package with CTI > 400 Groe Luft- und Kriechstrecken High Creepage and Clearance Distances Isolierte Bodenplatte Isolated Base Plate Standardgehuse Standard Housing Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 prepared by: MB date of publication: 2013-11-05 approved by: RO revision: 2.2 1Technische Information / Technical Information IGBT-Module FF200R17KE4 IGBT-modules Vorlufige Daten Preliminary Data IGBT,Wechselrichter / IGBT,Inverter Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25C V 1700 V vj CES Collector-emitter voltage Kollektor-Dauergleichstrom T = 100C, T = 175C I 200 A C vj max C nom Continuous DC collector current TC = 25C, Tvj max = 175C IC 310 A Periodischer Kollektor-Spitzenstrom t = 1 ms I 400 A P CRM Repetitive peak collector current Gesamt-Verlustleistung T = 25C, T = 175C P 1250 W C vj max tot Total power dissipation Gate-Emitter-Spitzenspannung VGES +/-20 V Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung I = 200 A, V = 15 V T = 25C 1,95 2,30 V C GE vj Collector-emitter saturation voltage I = 200 A, V = 15 V T = 125C V 2,35 V C GE vj CE sat I = 200 A, V = 15 V T = 150C 2,45 V C GE vj Gate-Schwellenspannung I = 8,00 mA, V = V , T = 25C V 5,2 5,8 6,4 V C CE GE vj GEth Gate threshold voltage Gateladung VGE = -15 V ... +15 V QG 2,30 C Gate charge Interner Gatewiderstand T = 25C R 3,8 vj Gint Internal gate resistor Eingangskapazitt f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 18,0 nF Input capacitance Rckwirkungskapazitt f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 0,58 nF vj CE GE res Reverse transfer capacitance Kollektor-Emitter-Reststrom VCE = 1700 V, VGE = 0 V, Tvj = 25C ICES 1,0 mA Collector-emitter cut-off current Gate-Emitter-Reststrom V = 0 V, V = 20 V, T = 25C I 100 nA CE GE vj GES Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last I = 200 A, V = 900 V T = 25C 0,24 s C CE vj t d on Turn-on delay time, inductive load VGE = 15 V Tvj = 125C 0,28 s R = 3,6 T = 150C 0,30 s Gon vj Anstiegszeit, induktive Last I = 200 A, V = 900 V T = 25C 0,05 s C CE vj t r Rise time, inductive load VGE = 15 V Tvj = 125C 0,055 s R = 3,6 T = 150C 0,055 s Gon vj Abschaltverzgerungszeit, induktive Last I = 200 A, V = 900 V T = 25C 0,70 s C CE vj t d off Turn-off delay time, inductive load VGE = 15 V Tvj = 125C 0,74 s R = 3,6 T = 150C 0,78 s Goff vj Fallzeit, induktive Last I = 200 A, V = 900 V T = 25C 0,08 s C CE vj t f Fall time, inductive load VGE = 15 V Tvj = 125C 0,13 s R = 3,6 T = 150C 0,15 s Goff vj Einschaltverlustenergie pro Puls I = 200 A, V = 900 V, L = 60 nH T = 25C 53,0 mJ C CE S vj Turn-on energy loss per pulse VGE = 15 V, di/dt = 3200 A/s (Tvj = 150C) Tvj = 125C Eon 72,0 mJ R = 3,6 T = 150C 77,0 mJ Gon vj Abschaltverlustenergie pro Puls I = 200 A, V = 900 V, L = 60 nH T = 25C 35,0 mJ C CE S vj Turn-off energy loss per pulse VGE = 15 V, du/dt = 3600 V/s (Tvj = 150C)Tvj = 125C Eoff 57,0 mJ R = 3,6 T = 150C 64,0 mJ Goff vj Kurzschluverhalten V 15 V, V = 1000 V GE CC ISC SC data VCEmax = VCES -LsCE di/dt tP 10 s, Tvj = 150C 900 A Wrmewiderstand, Chip bis Gehuse pro IGBT / per IGBT R 0,12 K/W thJC Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro IGBT / per IGBT R 0,035 K/W thCH Thermal resistance, case to heatsink Paste = 1 W/(mK) / grease = 1 W/(mK) Temperatur im Schaltbetrieb T -40 150 C vj op Temperature under switching conditions prepared by: MB date of publication: 2013-11-05 approved by: RO revision: 2.2 2