Advance Technical Information High Voltage IGBT V = 1700V IXGR6N170A CES I = 5.5A C25 V 7.0V CE(sat) t = 32ns fi(typ) (Electrically Isolated Tab) Symbol Test Conditions Maximum Ratings TM ISOPLUS247 V T = 25C to 150C 1700 V CES C V T = 25C to 150C, R = 1M 1700 V CGR J GE V Continuous 20 V GES V Transient 30 V GEM G I T = 25C 5.5 A C Isolated Tab C25 C E I T = 110C 2.5 A C110 C I T = 25C, 1ms 18 A CM C G = Gate C = Collector E = Emitter SSOA V = 15V, T = 125C, R = 33 I = 12 A GE VJ G CM (RBSOA) Clamped Inductive Load 0.8 V CES t T = 125C, V = 1200 V, V = 15 V, R = 33 10 s SC J CE GE G P T = 25C 50 W C C Features T - 55 ... +150 C J z Silicon Chip on Direct-Copper Bond T 150 C JM (DCB) Substrate T - 55 ... +150 C z stg Isolated Mounting Surface z V 50/60 Hz, RMS, t = 1minute 2500 V~ 2500V~ Electrical Isolation ISOL I < 1mA t = 20 seconds 3000 V~ ISOL Advantages F Mounting Force 20..120/4.5..27 N/lb C z High Power Density T Maximum Lead Temperature for Soldering 300 C L z Low Gate Drive Requirement T 1.6mm (0.062 in.) from Case for 10s 260 C SOLD Weight 5 g Applications z Power Inverters z UPS Symbol Test Conditions Characteristic Values z Motor Drives (T = 25C Unless Otherwise Specified) Min. Typ. Max. J z SMPS z BV I = 250A, V = 0V 1700 V PFC Circuits CES C GE z Welding Machines V I = 250A, V = V 3.0 5.0 V GE(th) C CE GE I V = 0.8 V , V = 0V 10 A CES CE CES GE Note 2, T = 125C 500 A J I V = 0V, V = 20V 100 nA GES CE GE V I = 3A, V = 15V, Note 1 7.0 V CE(sat) C GE T = 125C 5.4 V J 2010 IXYS CORPORATION, All Rights Reserved DS100279(08/09)IXGR6N170A Symbol Test Conditions Characteristic Values ISOPLUS247 (IXGR) Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g I = 6A, V = 20V, Note 1 2.0 3.5 S fs C CE C 390 pF ies C V = 25V, V = 0V, f = 1MHz 20 pF oes CE GE C 7 pF res Q 18.5 nC g Q I = 6A, V = 15V, V = 0.5 V 2.8 nC ge C GE CE CES Q 8.2 nC gc t 46 ns d(on) Inductive load, T = 25C t 40 ns J ri I = 6A, V = 15V E 0.59 mJ C GE on V = 0.5 V , R = 33 t 220 400 ns CE CES G d(off) Note 3 t 32 65 ns fi E 0.18 0.36 mJ off t 48 ns d(on) Inductive load, T = 125C J t 43 ns ri I = 6A, V = 15V E C GE 0.62 mJ on V = 0.5 V , R = 33 t 230 ns CE CES G d(off) Note 3 t 41 ns fi E 0.25 mJ off R 2.5 C/W thJC R 0.15 C/W thCK Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Part must be heatsunk for high-temp Ices measurement. 3. Switching times & energy losses may increase for higher V (Clamp), T or R . CE J G ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537