Technische Information / Technical Information IGBT-Module FF75R12RT4 IGBT-modules 34mm Modul mit schnellem Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode 34mm module with fast Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode Vorlufige Daten / Preliminary Data VCES = 1200V I = 75A / I = 150A C nom CRM Typische Anwendungen Typical Applications Hochleistungsumrichter High Power Converters Motorantriebe Motor Drives USV-Systeme UPS Systems Elektrische Eigenschaften Electrical Features Erweiterte Sperrschichttemperatur T Extended Operation Temperature T vj op vj op Niedrige Schaltverluste Low Switching Losses Niedriges V Low V CEsat CEsat T = 150C T = 150C vj op vj op V mit positivem Temperaturkoeffizienten V with positive Temperature Coefficient CEsat CEsat Mechanische Eigenschaften Mechanical Features Isolierte Bodenplatte Isolated Base Plate Standardgehuse Standard Housing Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 prepared by: MK date of publication: 2013-11-05 approved by: WR revision: 2.1 1Technische Information / Technical Information IGBT-Module FF75R12RT4 IGBT-modules Vorlufige Daten Preliminary Data IGBT,Wechselrichter / IGBT,Inverter Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25C V 1200 V vj CES Collector-emitter voltage Kollektor-Dauergleichstrom T = 100C, T = 175C I 75 A C vj max C nom Continuous DC collector current Periodischer Kollektor-Spitzenstrom t = 1 ms I 150 A P CRM Repetitive peak collector current Gesamt-Verlustleistung T = 25C, T = 175C P 395 W C vj max tot Total power dissipation Gate-Emitter-Spitzenspannung VGES +/-20 V Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung I = 75 A, V = 15 V T = 25C 1,85 2,15 V C GE vj Collector-emitter saturation voltage I = 75 A, V = 15 V T = 125C V 2,15 V C GE vj CE sat I = 75 A, V = 15 V T = 150C 2,25 V C GE vj Gate-Schwellenspannung I = 2,40 mA, V = V , T = 25C V 5,2 5,8 6,4 V C CE GE vj GEth Gate threshold voltage Gateladung VGE = -15 V ... +15 V QG 0,57 C Gate charge Interner Gatewiderstand T = 25C R 10 vj Gint Internal gate resistor Eingangskapazitt f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 4,30 nF Input capacitance Rckwirkungskapazitt f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 0,25 nF vj CE GE res Reverse transfer capacitance Kollektor-Emitter-Reststrom VCE = 1200 V, VGE = 0 V, Tvj = 25C ICES 1,0 mA Collector-emitter cut-off current Gate-Emitter-Reststrom V = 0 V, V = 20 V, T = 25C I 100 nA CE GE vj GES Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last I = 75 A, V = 600 V T = 25C 0,13 s C CE vj t d on Turn-on delay time, inductive load VGE = 15 V Tvj = 125C 0,15 s R = 2,2 T = 150C 0,15 s Gon vj Anstiegszeit, induktive Last I = 75 A, V = 600 V T = 25C 0,02 s C CE vj t r Rise time, inductive load VGE = 15 V Tvj = 125C 0,03 s R = 2,2 T = 150C 0,035 s Gon vj Abschaltverzgerungszeit, induktive Last I = 75 A, V = 600 V T = 25C 0,30 s C CE vj t d off Turn-off delay time, inductive load VGE = 15 V Tvj = 125C 0,38 s R = 2,2 T = 150C 0,40 s Goff vj Fallzeit, induktive Last I = 75 A, V = 600 V T = 25C 0,045 s C CE vj t f Fall time, inductive load VGE = 15 V Tvj = 125C 0,08 s R = 2,2 T = 150C 0,09 s Goff vj Einschaltverlustenergie pro Puls I = 75 A, V = 600 V, L = 30 nH T = 25C 6,00 mJ C CE S vj Turn-on energy loss per pulse VGE = 15 V, di/dt = 1900 A/s (Tvj = 150C) Tvj = 125C Eon 9,50 mJ R = 2,2 T = 150C 10,5 mJ Gon vj Abschaltverlustenergie pro Puls I = 75 A, V = 600 V, L = 30 nH T = 25C 4,00 mJ C CE S vj Turn-off energy loss per pulse VGE = 15 V, du/dt = 3700 V/s (Tvj = 150C)Tvj = 125C Eoff 6,50 mJ R = 2,2 T = 150C 7,00 mJ Goff vj Kurzschluverhalten V 15 V, V = 800 V GE CC ISC SC data VCEmax = VCES -LsCE di/dt tP 10 s, Tvj = 150C 270 A Wrmewiderstand, Chip bis Gehuse pro IGBT / per IGBT R 0,38 K/W thJC Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro IGBT / per IGBT R 0,083 K/W thCH Thermal resistance, case to heatsink Paste = 1 W/(mK) / grease = 1 W/(mK) Temperatur im Schaltbetrieb T -40 150 C vj op Temperature under switching conditions prepared by: MK date of publication: 2013-11-05 approved by: WR revision: 2.1 2