FM24CL64B-G Infineon

FM24CL64B-G electronic component of Infineon
FM24CL64B-G Infineon
FM24CL64B-G F-RAM
FM24CL64B-G  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of FM24CL64B-G F-RAM across the USA, India, Europe, Australia, and various other global locations. FM24CL64B-G F-RAM are a product manufactured by Infineon. We provide cost-effective solutions for F-RAM, ensuring timely deliveries around the world.

Part No. FM24CL64B-G
Manufacturer: Infineon
Category: F-RAM
Description: F-RAM 64Kb Serial I2C 3V FRAM
Datasheet: FM24CL64B-G Datasheet (PDF)
Price (USD)
2910: USD 1.5162 ea
Line Total: USD 4412.14 
Availability : 0
  
QtyUnit Price
2910$ 1.5162

Availability 5952
Ship by Wed. 29 Oct to Fri. 31 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 2.8
10$ 2.3575
25$ 2.222
50$ 2.079
100$ 2.046
250$ 1.969
500$ 1.936
1000$ 1.892
2910$ 1.848


Availability 144
Ship by Wed. 29 Oct to Fri. 31 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 3.794
2$ 3.654
7$ 3.136
17$ 2.968
97$ 2.926


Availability 986
Ship by Fri. 31 Oct to Thu. 06 Nov
MOQ : 207
Multiples : 1
QtyUnit Price
207$ 2.2656
500$ 2.1562
1000$ 2.0312
10000$ 1.9063


Availability 712
Ship by Fri. 31 Oct to Thu. 06 Nov
MOQ : 207
Multiples : 1
QtyUnit Price
207$ 2.2656
500$ 2.1562
1000$ 2.0312
10000$ 1.9063


Availability 2776
Ship by Fri. 31 Oct to Thu. 06 Nov
MOQ : 111
Multiples : 1
QtyUnit Price
111$ 2.3582
112$ 2.3348
113$ 2.3062
114$ 2.2828
250$ 2.1725
500$ 1.995
1000$ 1.86
2910$ 1.6612


Availability 8468
Ship by Fri. 31 Oct to Thu. 06 Nov
MOQ : 2910
Multiples : 2910
QtyUnit Price
2910$ 1.5162


Availability 3914
Ship by Fri. 31 Oct to Thu. 06 Nov
MOQ : 117
Multiples : 1
QtyUnit Price
117$ 2.2403
118$ 2.2177
119$ 2.1995
120$ 2.1767
250$ 2.0726
500$ 1.9431
1000$ 1.834
2910$ 1.767


Availability 2490
Ship by Fri. 31 Oct to Thu. 06 Nov
MOQ : 130
Multiples : 1
QtyUnit Price
130$ 2.002

   
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We are delighted to provide the FM24CL64B-G from our F-RAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FM24CL64B-G and other electronic components in the F-RAM category and beyond.

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FM24CL64B 2 64-Kbit (8K 8) Serial (I C) F-RAM 64-Kbit (8K 8) Serial (I2C) F-RAM Features Functional Description The FM24CL64B is a 64-Kbit nonvolatile memory employing an 64-Kbit ferroelectric random access memory (F-RAM) logically advanced ferroelectric process. A ferroelectric random access organized as 8K 8 14 memory or F-RAM is nonvolatile and performs reads and writes High-endurance 100 trillion (10 ) read/writes similar to a RAM. It provides reliable data retention for 151 years 151-year data retention (See Data Retention and Endurance while eliminating the complexities, overhead, and system-level on page 10) reliability problems caused by EEPROM and other nonvolatile NoDelay writes memories. Advanced high-reliability ferroelectric process 2 Unlike EEPROM, the FM24CL64B performs write operations at Fast 2-wire Serial interface (I C) bus speed. No write delays are incurred. Data is written to the Up to 1-MHz frequency memory array immediately after each byte is successfully 2 Direct hardware replacement for serial (I C) EEPROM transferred to the device. The next bus cycle can commence Supports legacy timings for 100 kHz and 400 kHz without the need for data polling. In addition, the product offers substantial write endurance compared with other nonvolatile Low power consumption memories. Also, F-RAM exhibits much lower power during writes 100 A (typ) active current at 100 kHz than EEPROM since write operations do not require an internally 3 A (typ) standby current elevated power supply voltage for write circuits. The 14 Voltage operation: V = 2.7 V to 3.65 V DD FM24CL64B is capable of supporting 10 read/write cycles, or 100 million times more write cycles than EEPROM. Industrial temperature: 40 C to +85 C These capabilities make the FM24CL64B ideal for nonvolatile Packages memory applications, requiring frequent or rapid writes. 8-pin small outline integrated circuit (SOIC) package Examples range from data logging, where the number of write 8-pin thin dual flat no leads (DFN) package cycles may be critical, to demanding industrial controls where the Restriction of hazardous substances (RoHS) compliant long write time of EEPROM can cause data loss. The combination of features allows more frequent data writing with less overhead for the system. The FM24CL64B provides substantial benefits to users of serial 2 (I C) EEPROM as a hardware drop-in replacement. The device specifications are guaranteed over an industrial temperature range of 40 C to +85 C. For a complete list of related documentation, click here. Logic Block Diagram 8 K x 8 Address Counter F-RAM Array Latch 13 8 Serial to Parallel SDA Data Latch Converter 8 SCL Control Logic WP A2-A0 Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 001-84458 Rev. *K Revised December 5, 2018FM24CL64B Contents Pinouts ..............................................................................3 Capacitance .................................................................... 10 Pin Definitions ..................................................................3 Thermal Resistance ........................................................ 10 Functional Overview ........................................................4 AC Test Loads and Waveforms ..................................... 10 Memory Architecture ........................................................4 AC Test Conditions ........................................................ 10 I2C Interface ......................................................................4 AC Switching Characteristics ....................................... 11 STOP Condition (P) .....................................................4 Power Cycle Timing ....................................................... 12 START Condition (S) ...................................................4 Ordering Information ...................................................... 13 Data/Address Transfer ................................................5 Ordering Code Definitions ......................................... 13 Acknowledge/No-acknowledge ...................................5 Package Diagrams .......................................................... 14 Slave Device Address .................................................6 Acronyms ........................................................................ 16 Addressing Overview ..................................................6 Document Conventions ................................................. 16 Data Transfer ..............................................................6 Units of Measure ....................................................... 16 Memory Operation ............................................................6 Document History Page ................................................. 17 Write Operation ...........................................................6 Sales, Solutions, and Legal Information ...................... 19 Read Operation ...........................................................7 Worldwide Sales and Design Support ....................... 19 Endurance .........................................................................8 Products .................................................................... 19 Maximum Ratings .............................................................9 PSoC Solutions ...................................................... 19 Operating Range ...............................................................9 Cypress Developer Community ................................. 19 DC Electrical Characteristics ..........................................9 Technical Support ..................................................... 19 Data Retention and Endurance .....................................10 Document Number: 001-84458 Rev. *K Page 2 of 19

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION
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