Technische Information / Technical Information IGBT-Module FZ1200R33HE3 IGBT-modules IHM-B Modul mit schnellem Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode IHM-B module with fast Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode V = 3300V CES I = 1200A / I = 2400A C nom CRM Typische Anwendungen Typical Applications Chopper-Anwendungen Chopper Applications Mittelspannungsantriebe Medium Voltage Converters Motorantriebe Motor Drives Traktionsumrichter Traction Drives USV-Systeme UPS Systems Windgeneratoren Wind Turbines Elektrische Eigenschaften Electrical Features Groe DC-Festigkeit High DC Stability Hohe Kurzschlussrobustheit, selbstlimitierender High Short Circuit Capability, Self Limiting Short Kurzschlussstrom Circuit Current Niedrige Schaltverluste Low Switching Losses Niedriges V Low V CEsat CEsat Sehr groe Robustheit Unbeatable Robustness T = 150C T = 150C vj op vj op V CEsat mit positivem Temperaturkoeffizienten VCEsat with positive Temperature Coefficient Mechanische Eigenschaften Mechanical Features AlSiC Bodenplatte fr erhhte thermische AlSiC Base Plate for increased Thermal Cycling Lastwechselfestigkeit Capability Gehuse mit CTI > 600 Package with CTI > 600 IHM B Gehuse IHM B Housing Isolierte Bodenplatte Isolated Base Plate Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 prepared by: SB date of publication: 2013-12-11 approved by: DTS revision: 3.1 1Technische Information / Technical Information IGBT-Module FZ1200R33HE3 IGBT-modules IGBT,Wechselrichter / IGBT,Inverter Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung Tvj = -40C 3300 V V CES Collector-emitter voltage T = 150C 3300 vj Kollektor-Dauergleichstrom T = 95C, T = 150C I 1200 A C vj max C nom Continuous DC collector current Periodischer Kollektor-Spitzenstrom t = 1 ms I 2400 A P CRM Repetitive peak collector current Gesamt-Verlustleistung T = 25C, T = 150C P 13,0 kW C vj max tot Total power dissipation Gate-Emitter-Spitzenspannung VGES +/-20 V Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung I = 1200 A, V = 15 V T = 25C 2,70 3,20 V C GE vj Collector-emitter saturation voltage I = 1200 A, V = 15 V T = 125C V 3,15 3,60 V C GE vj CE sat I = 1200 A, V = 15 V T = 150C 3,30 V C GE vj Gate-Schwellenspannung I = 54,0 mA, V = V , T = 25C V 5,2 5,8 6,4 V C CE GE vj GEth Gate threshold voltage Gateladung VGE = -15 V ... +15 V, VCE = 1800V QG 32,0 C Gate charge Interner Gatewiderstand T = 25C R 0,44 vj Gint Internal gate resistor Eingangskapazitt f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 210 nF Input capacitance Rckwirkungskapazitt f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 4,50 nF vj CE GE res Reverse transfer capacitance Kollektor-Emitter-Reststrom VCE = 3300 V, VGE = 0 V, Tvj = 25C ICES 5,0 mA Collector-emitter cut-off current Gate-Emitter-Reststrom V = 0 V, V = 20 V, T = 25C I 400 nA CE GE vj GES Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last I = 1200 A, V = 1800 V T = 25C 0,60 s C CE vj t d on Turn-on delay time, inductive load VGE = 15 V Tvj = 125C 0,60 s R = 1,3 , C = 220 nF T = 150C 0,60 s Gon GE vj Anstiegszeit, induktive Last I = 1200 A, V = 1800 V T = 25C 0,55 s C CE vj t r Rise time, inductive load VGE = 15 V Tvj = 125C 0,55 s R = 1,3 , C = 220 nF T = 150C 0,55 s Gon GE vj Abschaltverzgerungszeit, induktive Last I = 1200 A, V = 1800 V T = 25C 3,00 s C CE vj t d off Turn-off delay time, inductive load VGE = 15 V Tvj = 125C 3,20 s R = 2,4 , C = 220 nF T = 150C 3,20 s Goff GE vj Fallzeit, induktive Last I = 1200 A, V = 1800 V T = 25C 0,30 s C CE vj t f Fall time, inductive load VGE = 15 V Tvj = 125C 0,35 s R = 2,4 , C = 220 nF T = 150C 0,35 s Goff GE vj Einschaltverlustenergie pro Puls I = 1200 A, V = 1800 V, L = 85 nH T = 25C 1400 mJ C CE S vj Turn-on energy loss per pulse VGE = 15 V, di/dt = 4300 A/s (Tvj = 150C) Tvj = 125C Eon 1950 mJ R = 0,62 , C = 220 nF T = 150C 2200 mJ Gon GE vj Abschaltverlustenergie pro Puls I = 1200 A, V = 1800 V, L = 85 nH T = 25C 1350 mJ C CE S vj Turn-off energy loss per pulse VGE = 15 V, du/dt = 2100 V/s (Tvj = 150C)Tvj = 125C Eoff 1800 mJ R = 2,4 , C = 220 nF T = 150C 1950 mJ Goff GE vj Kurzschluverhalten V 15 V, V = 2500 V GE CC ISC SC data VCEmax = VCES -LsCE di/dt tP 10 s, Tvj = 150C 4800 A Wrmewiderstand, Chip bis Gehuse pro IGBT / per IGBT R 9,55 K/kW thJC Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro IGBT / per IGBT R 10,0 K/kW thCH Thermal resistance, case to heatsink Paste = 1 W/(mK) / grease = 1 W/(mK) Temperatur im Schaltbetrieb T -40 150 C vj op Temperature under switching conditions prepared by: SB date of publication: 2013-12-11 approved by: DTS revision: 3.1 2