X-On Electronics has gained recognition as a prominent supplier of FZ600R12KE4 IGBT Modules across the USA, India, Europe, Australia, and various other global locations. FZ600R12KE4 IGBT Modules are a product manufactured by Infineon. We provide cost-effective solutions for IGBT Modules, ensuring timely deliveries around the world.

FZ600R12KE4 Infineon

FZ600R12KE4 electronic component of Infineon
Images are for reference only
See Product Specifications
Part No. FZ600R12KE4
Manufacturer: Infineon
Category: IGBT Modules
Description: Infineon Technologies IGBT Modules IGBT 1200V 600A
Datasheet: FZ600R12KE4 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 111.727 ea
Line Total: USD 111.73 
Availability - 8
Ship by Mon. 16 Jun to Wed. 18 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
8
Ship by Mon. 16 Jun to Wed. 18 Jun
MOQ : 1
Multiples : 1
1 : USD 111.727
10 : USD 104.511

   
Manufacturer
Product Category
Product
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Maximum Operating Temperature
Minimum Operating Temperature
Packaging
Pd - Power Dissipation
Hts Code
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the FZ600R12KE4 from our IGBT Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FZ600R12KE4 and other electronic components in the IGBT Modules category and beyond.

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/ Technical Information IGBT- FZ600R12KE4 IGBT-modules 62mm C-Series /IGBT4 62mm C-Series module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode / Preliminary Data VCES = 1200V I = 600A / I = 1200A C nom CRM Typical Applications High Power Converters Motor Drives UPS UPS Systems Wind Turbines Electrical Features T vj op Extended Operation Temperature Tvj op Low Switching Losses Unbeatable Robustness V V with positive Temperature Coefficient CEsat CEsat V Low V CEsat CEsat Mechanical Features 4 kV 1 4 kV AC 1min Insulation CTI > 400 Package with CTI > 400 High Creepage and Clearance Distances Isolated Base Plate Standard Housing Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 prepared by: MK date of publication: 2013-11-04 approved by: WR revision: 2.1 UL approved (E83335) 1 / Technical Information IGBT- FZ600R12KE4 IGBT-modules Preliminary Data IGBT, / IGBT,Inverter / Maximum Rated Values T = 25C V 1200 V vj CES Collector-emitter voltage T = 100C, T = 175C I 600 A C vj max C nom Continuous DC collector current t = 1 ms I 1200 A P CRM Repetitive peak collector current T = 25C, T = 175C P 3000 W C vj max tot Total power dissipation VGES +/-20 V Gate-emitter peak voltage / Characteristic Values min. typ. max. I = 600 A, V = 15 V T = 25C 1,75 2,10 V C GE vj Collector-emitter saturation voltage I = 600 A, V = 15 V T = 125C V 2,00 V C GE vj CE sat I = 600 A, V = 15 V T = 150C 2,05 V C GE vj I = 23,0 mA, V = V , T = 25C V 5,2 5,8 6,4 V C CE GE vj GEth Gate threshold voltage VGE = -15 V ... +15 V QG 5,60 C Gate charge T = 25C R 1,3 vj Gint Internal gate resistor f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 42,0 nF Input capacitance f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 1,70 nF vj CE GE res Reverse transfer capacitance - VCE = 1200 V, VGE = 0 V, Tvj = 25C ICES 5,0 mA Collector-emitter cut-off current - V = 0 V, V = 20 V, T = 25C I 400 nA CE GE vj GES Gate-emitter leakage current () I = 600 A, V = 600 V T = 25C 0,24 s C CE vj t d on Turn-on delay time, inductive load VGE = 15 V Tvj = 125C 0,25 s R = 1,2 T = 150C 0,26 s Gon vj () I = 600 A, V = 600 V T = 25C 0,09 s C CE vj t r Rise time, inductive load VGE = 15 V Tvj = 125C 0,10 s R = 1,2 T = 150C 0,11 s Gon vj () I = 600 A, V = 600 V T = 25C 0,61 s C CE vj t d off Turn-off delay time, inductive load VGE = 15 V Tvj = 125C 0,64 s R = 1,2 T = 150C 0,66 s Goff vj () I = 600 A, V = 600 V T = 25C 0,10 s C CE vj t f Fall time, inductive load VGE = 15 V Tvj = 125C 0,14 s R = 1,2 T = 150C 0,15 s Goff vj () I = 600 A, V = 600 V, L = 60 nH T = 25C 35,0 mJ C CE S vj Turn-on energy loss per pulse VGE = 15 V, di/dt = 5500 A/s (Tvj = 150C) Tvj = 125C Eon 50,0 mJ R = 1,2 T = 150C 55,0 mJ Gon vj ( I = 600 A, V = 600 V, L = 60 nH T = 25C 50,0 mJ C CE S vj Turn-off energy loss per pulse VGE = 15 V, du/dt = 3500 V/s (Tvj = 150C)Tvj = 125C Eoff 75,0 mJ R = 1,2 T = 150C 80,0 mJ Goff vj V 15 V, V = 800 V GE CC ISC SC data VCEmax = VCES -LsCE di/dt tP 10 s, Tvj = 150C 2400 A IGBT / per IGBT R 0,05 K/W thJC Thermal resistance, junction to case IGBT / per IGBT R 0,017 K/W thCH Thermal resistance, case to heatsink Paste = 1 W/(mK) / grease = 1 W/(mK) T -40 150 C vj op Temperature under switching conditions prepared by: MK date of publication: 2013-11-04 approved by: WR revision: 2.1 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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