Product Information

IPB65R045C7ATMA2

IPB65R045C7ATMA2 electronic component of Infineon

Datasheet
Power Management Specialized - PMIC HIGH POWER_NEW
Manufacturer: Infineon
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 13.0048 ea
Line Total: USD 13

2948 - Global Stock
Ships to you between
Fri. 17 May to Tue. 21 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
2754 - WHS 1


Ships to you between Fri. 17 May to Tue. 21 May

MOQ : 1
Multiples : 1
1 : USD 13.0048
10 : USD 11.58
25 : USD 11.4109
50 : USD 11.2539
100 : USD 10.312
250 : USD 10.131
500 : USD 9.6358
1000 : USD 8.9476
2000 : USD 8.694

Read More Specifications

     
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Product Category
RoHS - XON
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Additional Infomation About Product

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C7 650V CoolMOS C7 Power Transistor IPB65R045C7 Data Sheet Rev. 2.1 Final Power Management & Multimarket650V CoolMOS C7 Power Transistor IPB65R045C7 DPAK 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and tab pioneered by Infineon Technologies. CoolMOS C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The product portfolio 2 provides all benefits of fast switching superjunction MOSFETs offering 1 better efficiency, reduced gate charge, easy implementation and 3 outstanding reliability. Features Drain Increased MOSFET dv/dt ruggedness Pin 2, tab Better efficiency due to best in class FOM R *E and R *Q DS(on) oss DS(on) g Best in class RDS(on) /package Easy to use/drive Gate Pin 1 Pb-free plating, halogen free mold compound Qualified for industrial grade applications according to JEDEC (J-STD20 and JESD22) Source Pin 3 Benefits Enabling higher system efficiency Enabling higher frequency / increased power density solutions System cost / size savings due to reduced cooling requirements Higher system reliability due to lower operating temperatures Applications PFC stages and hard switching PWM stages for e.g. Computing, Server, Telecom, UPS and Solar. Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended. Table 1 Key Performance Parameters Parameter Value Unit VDS Tj,max 700 V RDS(on),max 45 m Q 93 nC g.typ I 212 A D,pulse E 400V 11.7 J oss Body diode di/dt 60 A/s Type / Ordering Code Package Marking Related Links IPB65R045C7 PG-TO 263 65C7045 see Appendix A Final Data Sheet 2 Rev. 2.1, 2013-04-30

HS Compliance

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:

Infineon may also be referenced as

CYP
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION

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