Product Information

IPL65R099C7

Name: IPL65R099C7
Brand: Infineon
SKU: IPL65R099C7_Infineon
Availability: OutOfStock
Rating: 5 (11 reviews)

IPL65R099C7 electronic component of Infineon

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MOSFET HIGH POWER BEST IN CLASS

Manufacturer: Infineon

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

8: USD 3.3486 ea
Line Total: USD 26.79

0 - Global Stock

MOQ: 8 Multiples: 1
Pack Size: 1

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Fri. 24 May to Tue. 28 May MOQ : 3000 Multiples : 3000 IPL65R099C7 Infineon	3000 : USD 3.473 6000 : USD 3.335

0 - WHS 2 Ships to you between Mon. 20 May to Fri. 24 May MOQ : 8 Multiples : 1 IPL65R099C7 Infineon	8 : USD 3.3486 10 : USD 2.986 50 : USD 2.8473 100 : USD 2.8473 500 : USD 2.8473

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Additional Infomation About Product

IPL65R099C7 MOSFET ThinPAK 8x8 650V CoolMOS C7 Power Transistor CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The product portfolio provides all benefits of fast switching superjunction MOSFETs offering better efficiency, reduced gate charge, easy implementation and outstanding reliability. Features Increased MOSFET dv/dt ruggedness Drain Pin 5 Better efficiency due to best in class FOM R *E and R *Q DS(on) oss DS(on) g ThinPAK SMD Package with very low parasitic inductance to enable fast and reliable switching with minimum of size to increase power-density Gate Pin 1 Easy to use/drive due to driver source pin for better control of the gate. Driver Source Pb-free plating, halogen free mold compound Power Pin 2 Source Qualified for industrial grade applications according to JEDEC (J-STD20 Pin 3,4 and JESD22) Benefits Enabling higher system efficiency by lower switching losses Enabling higher frequency / increased power density solutions System cost / size savings due to reduced cooling requirements Higher system reliability due to lower operating temperatures Potential applications PFC stages and hard switching PWM stages for e.g. Computing, Server, Telecom, UPS and Solar. Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended. Table 1 Key Performance Parameters Parameter Value Unit V T 700 V DS j,max R 99 m DS(on),max Q 45 nC g,typ I 100 A D,pulse E 400V 5.5 J oss Body diode diF/dt 60 A/s Type / Ordering Code Package Marking Related Links IPL65R099C7 PG-VSON-4 65C7099 see Appendix A Final Data Sheet 1 Rev. 2.1, 2017-08-29650V CoolMOS C7 Power Transistor IPL65R099C7 Table of Contents Description . 1 Maximum ratings 3 Thermal characteristics 4 Electrical characteristics . 5 Electrical characteristics diagrams . 7 Test Circuits . 11 Package Outlines . 12 Appendix A 13 Revision History 14 Trademarks . 14 Disclaimer 14 Final Data Sheet 2 Rev. 2.1, 2017-08-29

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Infineon may also be referenced as

CYP
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION

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