X-On Electronics has gained recognition as a prominent supplier of IRFB3207PBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRFB3207PBF MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRFB3207PBF Infineon

Name: IRFB3207PBF
Brand: Infineon
SKU: IRFB3207PBF_Infineon
Availability: InStock
Rating: 5 (11 reviews)

Hot

IRFB3207PBF electronic component of Infineon

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See Product Specifications

Part No.	IRFB3207PBF
Manufacturer:	Infineon
Category:	MOSFETs
Description:	MOSFET N Trench 75V 170A 4V @ 250uA 4.5 mÎ© @ 75A,10V TO-220 (TO-220-3) RoHS
Datasheet:	IRFB3207PBF Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 1.4074 ea
Line Total: USD 1.41

Availability - 8406
Ship by Fri. 27 Jun to Wed. 02 Jul

MOQ: 1 Multiples: 1
Pack Size: 1

IRFB3207PBF More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

2473

Ship by Fri. 20 Jun to Thu. 26 Jun

MOQ : 350
Multiples : 350

350 : USD 1.391
700 : USD 1.325
1050 : USD 1.3125
1750 : USD 1.3125
3500 : USD 1.3

8406

Ship by Fri. 27 Jun to Wed. 02 Jul

MOQ : 1
Multiples : 1

1 : USD 1.4074
10 : USD 1.1452
50 : USD 0.6315
100 : USD 0.5421
350 : USD 0.4899
1050 : USD 0.462

123

Ship by Wed. 18 Jun to Fri. 20 Jun

MOQ : 1
Multiples : 1

1 : USD 2.8625
10 : USD 2.148
25 : USD 1.958
100 : USD 1.639
500 : USD 1.419
1000 : USD 1.375
2000 : USD 1.353

39

Ship by Wed. 18 Jun to Fri. 20 Jun

MOQ : 1
Multiples : 1

1 : USD 5.432
3 : USD 4.872
5 : USD 3.738
14 : USD 3.528

Specifications

Manufacturer

Infineon Infineon

Product Category

MOSFETs MOSFETs

RoHS - XON

Y Y

Id - Continuous Drain Current

180 A 180 A

Vds - Drain-Source Breakdown Voltage

75 V 75 V

Rds On - Drain-Source Resistance

3.6 mOhms 3.6 mOhms

Transistor Polarity

N - Channel N - Channel

Pd - Power Dissipation

330 W 330 W

Mounting Style

Through Hole Through Hole

Package / Case

TO - 220 - 3 TO - 220 - 3

Packaging

Tube Tube

Technology

Si Si

Number of Channels

1 Channel 1 Channel

Vgs - Gate-Source Voltage

20 V 20 V

Qg - Gate Charge

180 nC 180 nC

Brand

Infineon Infineon

Continuous Drain Current

180 A 180 A

Drain-Source Breakdown Voltage

75 V 75 V

Gate-Source Breakdown Voltage

20 V 20 V

Power Dissipation

330 W 330 W

Rds On

3.6 Mohms 3.6 Mohms

Gate Charge Qg

180 nC 180 nC

Factory Pack Quantity :

50 50

Configuration

Single Single

Height

15.65 mm 15.65 mm

Length

10 mm 10 mm

Transistor Type

1 N - Channel 1 N - Channel

Width

4.4 mm 4.4 mm

Cnhts

8541290000 8541290000

Hts Code

8541290095 8541290095

Mxhts

85412999 85412999

Product Type

Mosfet Mosfet

Subcategory

Mosfets Mosfets

Taric

8541290000 8541290000

Notes:- Show Stocked Products With Similar Attributes.

IRFB3207PBF Alternative Parts

We are delighted to provide the IRFB3207PBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRFB3207PBF and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The Infineon IRFB3207PBF is a high power N-channel MOSFET with a 75V drain-source voltage rating and a drain current rating of up to 170A. It delivers low on-state resistance of 4.5mO at 75A and low gate-threshold voltage of 4V at 250uA. It comes packaged with the TO-220-3 (TO-220) package, which is RoHS compliant. This MOSFET is well-suited for use in power electronics applications with high power densities, such as inverters, motor controllers and power supplies.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Availability	Price	Buy Price	Quantity
2473 Ship by Fri. 20 Jun to Thu. 26 Jun MOQ : 350 Multiples : 350	350 : USD 1.391 700 : USD 1.325 1050 : USD 1.3125 1750 : USD 1.3125 3500 : USD 1.3

8406 Ship by Fri. 27 Jun to Wed. 02 Jul MOQ : 1 Multiples : 1	1 : USD 1.4074 10 : USD 1.1452 50 : USD 0.6315 100 : USD 0.5421 350 : USD 0.4899 1050 : USD 0.462

123 Ship by Wed. 18 Jun to Fri. 20 Jun MOQ : 1 Multiples : 1	1 : USD 2.8625 10 : USD 2.148 25 : USD 1.958 100 : USD 1.639 500 : USD 1.419 1000 : USD 1.375 2000 : USD 1.353

39 Ship by Wed. 18 Jun to Fri. 20 Jun MOQ : 1 Multiples : 1	1 : USD 5.432 3 : USD 4.872 5 : USD 3.738 14 : USD 3.528

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