PD- 95146 IRFB4710PbF IRFS4710PbF IRFSL4710PbF HEXFET Power MOSFET Applications V R max I DSS DS(on) D High frequency DC-DC converters 100V 0.014 75A Motor Control Uninterrutible Power Supplies Lead-Free Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective C to Simplify Design, (See OSS App. Note AN1001) 2 TO-220AB D Pak TO-262 Fully Characterized Avalanche Voltage IRFB4710 IRFS4710 IRFSL4710 and Current Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 75 D C GS I T = 100C Continuous Drain Current, V 10V 53 A D C GS I Pulsed Drain Current 300 DM P T = 25C Power Dissipation 3.8 W D A P T = 25C Power Dissipation 200 D C Linear Derating Factor 1.4 W/C V Gate-to-Source Voltage 20 V GS dv/dt Peak Diode Recovery dv/dt 8.2 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range STG C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torqe, 6-32 or M3 screw 10 lbfin (1.1Nm) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 0.74 JC R Case-to-Sink, Flat, Greased Surface 0.50 C/W CS R Junction-to-Ambient 62 JA R Junction-to-Ambient 40 JA Notes through are on page 11 www.irf.com 1 04/22/04IRFB/IRFS/IRFL4710PbF Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 100 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.11 V/C Reference to 25C, I = 1mA (BR)DSS J D R Static Drain-to-Source On-Resistance 0.011 0.014 V = 10V, I = 45A DS(on) GS D V Gate Threshold Voltage 3.5 5.5 V V = V , I = 250A GS(th) DS GS D 1.0 V = 95V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 80V, V = 0V, T = 150C DS GS J Gate-to-Source Forward Leakage 100 V = 20V GS nA I GSS Gate-to-Source Reverse Leakage -100 V = -20V GS Dynamic T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions g Forward Transconductance 35 S V = 50V, I = 45A fs DS D Q Total Gate Charge 110 170 I = 45A g D Q Gate-to-Source Charge 43 nC V = 50V gs DS Q Gate-to-Drain Mille) Charge 40 V = 10V, gd GS t Turn-On Delay Time 35 V = 50V d(on) DD t Rise Time 130 I = 45A r D ns t Turn-Off Delay Time 41 R = 4.5 d(off) G t Fall Time 38 V = 10V f GS C Input Capacitance 6160 V = 0V iss GS C Output Capacitance 440 V = 25V oss DS C Reverse Transfer Capacitance 250 pF = 1.0MHz rss C Output Capacitance 1580 V = 0V, V = 1.0V, = 1.0MHz oss GS DS C Output Capacitance 280 V = 0V, V = 80V, = 1.0MHz oss GS DS C eff. Effective Output Capacitance 430 V = 0V, V = 0V to 80V oss GS DS Avalanche Characteristics Parameter Typ. Max. Units E Single Pulse Avalanche Energy 190 mJ AS I Avalanche Current 45 A AR E Repetitive Avalanche Energy 20 mJ AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 75 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 300 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 45A, V = 0V SD J S GS t Reverse Recovery Time 74 110 ns T = 25C, I = 45A rr J F Q Reverse RecoveryCharge 180 260 nC di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D 2 www.irf.com