41)566*6,
IRG4PH50SPbF
INSULATED GATE BIPOLAR TRANSISTOR
Standard Speed IGBT
Features
C
V =1200V
CES
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V = 1.47V
CE(on) typ.
G
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@V = 15V, I = 33A
E
GE C
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TO-247AC
Absolute Maximum Ratings
Parameter Units
Max.
1200
V Collector-to-Emitter Voltage V
CES
I @ T = 25C Continuous Collector Current 57
C C
I @ T = 100C Continuous Collector Current
33
C C
A
Pulsed Collector Current 114
I
CM
I Clamped Inductive Load Current 114
LM
Gate-to-Emitter Voltage 20
V V
GE
30
Transient Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
E 270 mJ
ARV
P @ T =25 Maximum Power Dissipation 200
D C
W
P @ T =100 Maximum Power Dissipation 80
D C
T Operating Junction and
J
-55 to + 150
C
T Storage Temperature Range
STG
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw. 10 lbfin (1.1 Nm)
Thermal Resistance
Parameter Min. Typ. Max. Units
R Junction-to-Case 0.64
JC
Case-to-Sink, Flat, Greased Surface 0.24 C/W
R
CS
R Junction-to-Ambient, typical socket mount 40
JA
Wt Weight 6.0(0.21) g (oz)
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07/08/08IRG4PH50SPbF
Electrical Characteristics @ T = 25C (unless otherwise specified)
J
Parameter Min. Typ. Max. Units Conditions
V Collector-to-Emitter Breakdown Voltage 1200 V V = 0V, I = 250A
(BR)CES GE C
V Emitter-to-Collector Breakdown Voltage 18 V V = 0V, I = 1.0 A
(BR)ECS GE C
V /T Temperature Coeff. of Breakdown Voltage 1.22 V/C V = 0V, I = 2.0 mA
(BR)CES J GE C
1.47 1.7 I = 33A V = 15V
C GE
V Collector-to-Emitter Saturation Voltage 1.75 I = 57A See Fig.2, 5
C
CE(ON)
1.55 I = 33A , T = 150C
C J
V Gate Threshold Voltage 3.0 6.0 V = V , I = 250A
GE(th) CE GE C
DV /DT Temperature Coeff. of Threshold Voltage -11 mV/C V = V , I = 250A
GE(th) J CE GE C
g Forward Transconductance 27 40 S V = 100V, I = 33A
fe CE C
250 V = 0V, V = 1200V
GE CE
2.0 V = 0V, V = 10V, T = 25C
GE CE J
1000 V = 0V, V = 1200V, T = 150C
GE CE J
I Gate-to-Emitter Leakage Current 100 nA V = 20V
GES GE
Switching Characteristics @ T = 25C (unless otherwise specified)
J
Parameter Min. Typ. Max. Units Conditions
Q Total Gate Charge (turn-on) 167 251 I = 33A
g C
Q Gate - Emitter Charge (turn-on) 25 38 nC V = 400V See Fig. 8
ge CC
Q Gate - Collector Charge (turn-on) 55 83 V = 15V
gc GE
t Turn-On Delay Time 32
d(on)
t Rise Time 29 T = 25C
r J
t Turn-Off Delay Time 845 1268 I = 33A, V = 960V
d(off) C CC
t Fall Time 425 638 V = 15V, R = 5.0
f GE G
E Turn-On Switching Loss 1.80 Energy losses includetai
on
E Turn-Off Switching Loss 19.6 mJ See Fig. 9, 10, 14
off
E Total Switching Loss 21.4 44
ts
t Turn-On Delay Time 32 T = 150C,
d(on) J
t Rise Time 30 I = 33A, V = 960V
r C CC
t Turn-Off Delay Time 1170 V = 15V, R = 5.0
d(off) GE G
t Fall Time 1000 Energy losses includetai
f
E Total Switching Loss 37 mJ See Fig. 10,11,14
ts
L Internal Emitter Inductance 13 nH Measured 5mm from package
E
C Input Capacitance 3600 V = 0V
ies GE
C Output Capacitance 160 pF V = 30V See Fig. 7
oes CC
C Reverse Transfer Capacitance 30 = 1.0MHz
res
Notes:
Repetitive rating; V = 20V, pulse width limited by
GE
max. junction temperature. ( See fig. 13b )
Pulse width 80s; duty factor 0.1%.
V = 80%(V ), V = 20V, L = 10H, R = 5.0,
CC CES GE G
(See fig. 13a)
Pulse width 5.0s, single shot.
Repetitive rating; pulse width limited by maximum
junction temperature.
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