SPD02N80C3 TM CoolMOS Power Transistor ProductSummary Features V 800 V DS New revolutionaryhigh voltage technology R T =25C 2.7 DS(on)max j Extreme dv/dt rated Q 12 nC g,typ High peak current capability 1) Fully qualified according to JEDEC for industrial applications Pb-free lead plating RoHS compliant Halogen free mold compound Ultra low gate charge PG-TO252-3 Ultra low effective capacitances TM CoolMOS 800V designed for: Industrialapplication with high DC bulkvoltage Switching Application (i.e. active clamp forward ) xsx Type Package Marking SPD02N80C3 PG-TO252-3 02N80C3 Maximumratings, at T =25 C, unlessotherwise specified j Value Parameter Symbol Conditions Unit I T =25 C 2 Continuousdrain current A D C 1.2 T =100 C C 2) I T =25 C 6 Pulsed drain current D,pulse C E I =1 A, V =50 V Avalanche energy, single pulse 90 mJ AS D DD 2),3) E I =2 A, V =50 V 0.05 Avalanche energy, repetitive t AR D DD AR 2),3) I Avalanche current, repetitive t 2 A AR AR V =0640 V 50 MOSFET dv/dt ruggedness dv/dt V/ns DS Gate source voltage V static 20 V GS AC (f>1Hz) 30 P T =25 C 42 Powerdissipation W tot C T , T -55 ... 150 Operating and storage temperature C j stg Rev. 2.94 page 1 2020-05-10 SPD02N80C3 Maximumratings, at T =25 C, unlessotherwise specified j Value Parameter Symbol Conditions Unit Continuousdiode forward current I 2 A S T =25 C C 2) I 6 Diode pulse current S,pulse 4) dv/dt 4 V/ns Reverse diode dv/dt Parameter Symbol Conditions Values Unit min. typ. max. Thermalcharacteristics R Thermal resistance, junction - case - - 3 K/W thJC SMD version, device R on PCB, minimal - - 62 thJA footprint Thermalresistance, junction - ambient SMD version, device 2 on PCB, 6 cm cooling - 35 - 5) area Soldering temperature, reflow T reflowMSL1 - - 260 C sold soldering Electricalcharacteristics, at T =25 C, unlessotherwise specified j Staticcharacteristics V V =0 V, I =250 A Drain-source breakdown voltage 800 - - V (BR)DSS GS D Avalanche breakdown voltage V V =0 V, I =2 A - 870 - (BR)DS GS D V V =V , I =0.12 mA Gate threshold voltage 2.1 3 3.9 GS(th) DS GS D V =800 V, V =0 V, DS GS Zero gate voltage drain current I - - 5 A DSS T =25 C j V =800 V, V =0 V, DS GS - 25 - T =150 C j I V =20 V, V =0 V Gate-source leakage current - - 100 nA GSS GS DS V =10 V, I =1.2 A, GS D Drain-source on-state resistance R - 2.4 2.7 DS(on) T =25 C j V =10 V, I =1.2 A, GS D - 6.5 - T =150 C j Gate resistance R f=1 MHz, open drain - 1.2 - G Rev. 2.94 page 2 2020-05-10