SI1967DH-T1-GE3 VBsemi Elec

Name: SI1967DH-T1-GE3
Brand: VBsemi Elec
SKU: SI1967DHT1GE3_VBsemi_Elec
Availability: OutOfStock
Rating: 5 (11 reviews)

SI1967DH-T1-GE3 electronic component of VBsemi Elec

Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of SI1967DH-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI1967DH-T1-GE3 MOSFETs are a product manufactured by VBsemi Elec. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No.

SI1967DH-T1-GE3

Manufacturer:

VBsemi Elec

Category:

MOSFETs

Description:

20V 1.8A [email protected],2.5A 1.4W 2 P-Channel SC-70-6 MOSFETs ROHS

Datasheet:

SI1967DH-T1-GE3 Datasheet (PDF)

Shipping Charges:

Click here for details

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Price (USD)

1: USD 0.2642 ea
Line Total: USD 0.26

Availability : 0

Qty	Unit Price
1	$ 0.2642
10	$ 0.2584
30	$ 0.2544
100	$ 0.188

SI1967DH-T1-GE3 More Buying Options & Price Grid(s)

Availability

Price (USD)

Quantity

Availability0

Ship by Tue. 23 Jun to Mon. 29 Jun

MOQ : 1
Multiples : 1

Qty	Unit Price
1	$ 0.2642
10	$ 0.2584
30	$ 0.2544
100	$ 0.188

Specifications

Manufacturer VBsemi ElecVBsemi Elec
Product Category MOSFETsMOSFETs
Rohs yy
Package SC70 - 6SC70 - 6
Brand Category Vbsemi ElecVbsemi Elec
Drain Source Voltage Vdss 20 V20 V
Continuous Drain Current Id 1.8 A1.8 A
Drain Source On Resistance Rdson@Vgs Id 155 mOhms @4.5V , 2.5A155 mOhms @4.5V , 2.5A
Power Dissipation Pd 1.4 W1.4 W
Gate Threshold Voltage Vgsth@Id 1.5 V @250uA1.5 V @250uA
Reverse Transfer Capacitance Crss@Vds 33 pF @15V33 pF @15V
Type 2 P - Channel2 P - Channel
Input Capacitance Ciss@Vds 210 pF @15V210 pF @15V
Total Gate Charge Qg@Vgs 2.7 nC @4.5V2.7 nC @4.5V
Operating Temperature - 55 C ~ + 150 C @ (Tj)- 55 C ~ + 150 C @ (Tj)

SI1967DH-T1-GE3 Alternative Parts

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Hot	SI1967DH-T1-GE3 Vishay MOSFET 20V 1.3A DUAL P-CH MOSFET Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges. Stock: 27000

We are delighted to provide the SI1967DH-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI1967DH-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

.The SI1967DH-T1-GE3 is a 20V 1.8A [email protected],2.5A 1.4W 2 P-Channel SC-70-6 MOSFETs ROHS manufactured by VBsemi Elec. It is a small surface-mountable package device designed for use in electronic switching applications. It has two P-channel MOSFETs that are used to amplify or switch digital signals. The device is constructed using an SC-70-6 package for small size and low power consumption. It is RoHS compliant and suitable for a wide range of temperature ranges. The maximum drain exposed pad voltage is 20V and maximum drain current is 1.8A, while the maximum drain-source ON-resistance is 155mO at 4.5V and 2.5A. The power rating is 1.4W at the maximum rated power.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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